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Abderrahmane Zakarya Djennati

Observed names: A. Z. Djennati, Z. A. Djennati, Z. Djannati
ORCID: 0000-0002-3138-5711
Observed ORCID: 0000-0002-3138-5711
OpenAlex ID: A5031148322
Simulation Validation and Performance Optimization of Tandem Perovskite/Silicon Solar Cells Based on Experimental Single-Junction Perovskite Solar Cell
2025 · Mohammed Anes Belbachir, Abderrahmane Zakarya Djennati, et al. · Journal of Electronic Materials · 4
120 GHz bandwidth of UV graphene/AlGaN/AlN/GaN/AlGaNP-I-N photodetector
2024 · M. Khaouani, Z. Kourdi, et al. · Optical Materials · 3
Noise Characterization in InAlAs/InGaAs/InP pHEMTs for Low Noise Applications
2017 · Z. A. Djennati, K. Ghaffour · International Journal of Electrical and Computer Engineering (IJECE) · 2
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2-D physical modeling and DC optimization of a double delta doped In0.7Ga0.3As/In0.52Al0.48As/InP pHEMT
2015 · Z. A. Djennati, Z. Kourdi, et al. · International Symposium on Advanced Topics in Electrical Engineering · 1
Progressive performance enhancement of perovskite solar cells from single to triple absorber architectures: impact of defect density and thickness optimization
2026 · Hichem ROUIGUEB, Mohammed Anes Belbachir, et al. · Physica Scripta
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Neural-network compact modeling of gate leakage in pHEMTs across two epitaxial technologies
2026 · Abderrahmane Zakarya Djennati, Mohammed Khaouani, et al. · Solid-State Electronics
Numerical optimization of hybrid 2D/3D and tandem perovskite/silicon HTJ solar cells, based on an experimentally validated MAPbI 3 cell: influence of HTL doping and temperature
2026 · Hichem Rouigueb, Mohammed Khaouani, et al. · Semiconductor Science and Technology
HTL material variation of Graphene/ITO/TiO2/MAPbI3/spiro-OMeTAD solar cells under high temperature effect
2024 · A. Z. Djennati, S. Kerai, et al. · International Journal of Nanoelectronics and Materials (IJNeaM)
Corrigendum to “120 GHz bandwidth of UV graphene/AlGaN/AlN/GaN/AlGaNP-I-N photodetector”[Opt. Mater. 148 (2024) 114846]
2024 · M. Khaouani, Z. Kourdi, et al. · Optical Materials
Etude d’un Amplificateur à faible bruit et haute linéarité LNA à base de Transistors pHEMT ( InGaAs / InAlAs / InP ) : Application aux hyperfréquences.
2017 · Abderrahmane Zakarya Djennati · Dépôt Institutionnel de lUniversité de Tlemcen
Works count: 10
Citation count: 10
H-index: 2
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