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Stefan Georgiev

Observed names: Georgiev, Stefan, S Georgiev, S. Georgiev
ORCID: 0000-0002-9384-4426
Observed ORCID: 0000-0002-9384-4426
OpenAlex ID: A5031236403
Experimental study of the effect of local atomic ordering on the energy band gap of melt grown InGaAsN alloys
2017 · M Milanova, V Donchev, et al. · Semiconductor Science and Technology · 17
Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy
2017 · V. Donchev, M. Milanova, et al. · Journal of Crystal Growth · 15
Surface Photovoltage Study of Metal Halide Perovskites Deposited Directly on Crystalline Silicon
2023 · Vesselin Donchev, Davide Regaldo, et al. · ACS Omega · 13
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Effective Removal of Surface Recombination Centers in Silicon Nanowires Fabricated by Metal-Assisted Chemical Etching
2018 · V. Donchev, S. Georgiev, et al. · ACS Applied Energy Materials · 12
Study of GaAsSb:N bulk layers grown by liquid phase epitaxy for solar cells applications
2019 · M Milanova, V Donchev, et al. · Materials Research Express · 11
Surface photovoltage characterisation of metal halide perovskite on crystalline silicon using Kelvin probe force microscopy and metal-insulator-semiconductor configuration
2022 · Aleksandra Bojar, Davide Regaldo, et al. · EPJ Photovoltaics · 8
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Low-temperature LPE growth and characterization of GaAsSb layers for photovoltaic applications
2021 · V. Donchev, M. Milanova, et al. · Journal of Crystal Growth · 5
Synthesis of Nanostructured PLD AlN Films: XRD and Surface-Enhanced Raman Scattering Studies
2014 · Silvia Bakalova, Anna Szekeres, et al. · Micro and Nanosystems · 5
Dilute nitride InGaAsN and GaAsSbN layers grown by liquid-phase epitaxy for photovoltaic applications
2020 · V Donchev, M Milanova, et al. · Journal of Physics Conference Series · 4
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Optical properties of thick GaInAs(Sb)N layers grown by liquid-phase epitaxy
2017 · V Donchev, I Asenova, et al. · Journal of Physics Conference Series · 4
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Investigation of LPE grown dilute nitride InGaAs(Sb)N layers for photovoltaic applications
2019 · M. Milanova, V. Donchev, et al. · AIP conference proceedings · 3
Surface photovoltage study of GalnNAs layers for photovoltaic applications
2019 · V Donchev, S Georgiev, et al. · Journal of Physics Conference Series · 2
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Net gain bandwidth broadening in Yb:CaAlYO4 amplifiers: a prospect for 20-100 fs multi-mJ laser pulses
2024 · Lyuben S. Petrov, Dimitar Velkov, et al. · Conference on Lasers and Electro-Optics · 1
Net Gain Bandwidth Broadening in Yb:CALYO Amplifiers: Prospect for 30-100 fs multi-mJ Near Infrared Pulses
2024 · Lyuben S. Petrov, Dimitar Velkov, et al. · Optica Laser Congress (ASSL, LAC, LS&C) · 1
Surface Photovoltage Study of GaAsSbN and GaAsSb Layers Grown by LPE for Solar Cells Applications
2022 · Vesselin Donchev, Malina Milanova, et al. · Energies · 1
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Effect of growth temperature on nitrogen incorporation into GaAsN during liquid-phase epitaxy
2022 · M Milanova, V Donchev, et al. · Journal of Physics Conference Series · 1
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Doping of dilute nitride compounds grown by liquid phase epitaxy
2023 · M Milanova, S Georgiev, et al. · Journal of Physics Conference Series
Modelling investigations of surface photovoltage including surface defects
2022 · Connolly, James P., da Lisca, Mattia, et al. · HAL
Surface photovoltage characterisation of metal halide perovskite on c-SI using kelvin probe force microscopy and metal-insulator-semiconductor configuration
2021 · Bojar, Aleksandra, Alvarez, J, et al. · HAL
Study of GaAs-Based Dilute Nitride Materials Grown by Liquid Phase Epitaxy
2021 · V. Donchev, M. Milanova, et al. · Book Publisher International (a part of SCIENCEDOMAIN International)
Calculation of the Bandgap of Dilute Nitride GaAsSbN Alloys
2021 · S Georgiev, V Donchev, et al. · Journal of Physics Conference Series
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Corrigendum to “Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy” [J. Cryst. Growth 483 (2018) 140–146]
2018 · V. Donchev, M. Milanova, et al. · Journal of Crystal Growth
Works count: 22
Citation count: 103
H-index: 6
I10-index: 5
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