Author

J. M. Zhou

Observed names: J M Zhou, J Zhou, J. Zhou, J.M Zhou, J.M. Zhou, Jia-Bao Zhou

Observed institutions: The University of Sydney, University of South Carolina, Lund University, Chinese Academy of Sciences, Wuhan University, Max Planck Institute for Solid State Research, RIKEN, Institute of Physics, Academia Sinica, Shanghai Institute of Technical Physics, Institute of Semiconductors, Institute of Physics, National Laboratory for Superconductivity, Academia Sinica, Northeastern University

ORCID: 0000-0002-6190-2193

Observed ORCID: 0000-0002-6190-2193

OpenAlex ID: A5031469893

Method for measurement of lattice parameter of cubic GaN layers on GaAs (001)

2003 · X.H. Zheng, Y.T. Wang, et al. · Journal of Crystal Growth · 47

Exciton binding energy in Inx Ga1−x As/GaAs strained quantum wells

1990 · H. Q. Hou, Y. Segawa, et al. · Physical review. B, Condensed matter · 45

Pressure dependence of photoluminescence in Inx Ga1−x As/GaAs strained quantum wells

1990 · H. Q. Hou, L. J. Wang, et al. · Physical review. B, Condensed matter · 25

Optical Fiber Temperature Sensor Based on PDMS-Filled Air-Cavity Fabry–Perot Structure

2023 · Zi-Kang Yin, Ri-Qing Lv, et al. · IEEE Transactions on Instrumentation and Measurement · 22

Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers

1999 · C.S. Peng, H. Chen, et al. · Journal of Crystal Growth · 22

MBE growth and Raman studies of cubic and hexagonal GaN films on (001)-oriented GaAs substrates

2000 · H.F. Liu, H. Chen, et al. · Journal of Crystal Growth · 21

Influence of Si doping on optical characteristics of cubic GaN grown on (001) GaAs substrates

2000 · Z. Q. Li, H. Chen, et al. · Applied Physics Letters · 20

Photomodulated transmission spectroscopy of the intersubband transitions in strained In1−x Gax As/GaAs multiple quantum wells under hydrostatic pressure

1991 · W. Shan, X. M. Fang, et al. · Physical review. B, Condensed matter · 20

Resonant photorefractive AlGaAs/GaAs multiple quantum wells grown by molecular beam epitaxy at low temperature

1996 · W. Feng, Z. G. Zhang, et al. · Journal of Applied Physics · 18

Machinability of Abrasion Resistance Cast Iron with PCBN Cutting Tools

2008 · J. M. Zhou, M. Andersson · Materials and Manufacturing Processes · 13

Photoluminescence intensity of InGaAs/GaAs Strained quantum wells under high magnetic fields

1990 · H.Q. Hou, W. Staguhn, et al. · Solid State Communications · 12

Controllable cubic and hexagonal GaN growth on GaAs(001) substrates by molecular beam epitaxy

2000 · H Chen, Z.Q Li, et al. · Journal of Crystal Growth · 11

Influence of growth conditions on Al-Ga interdiffusion in low-temperature grown AlGaAs/GaAs multiple quantum wells

1997 · W. Feng, F. Chen, et al. · Applied Physics Letters · 11

On the Analytical Representation of Chip Area and Tool Geometry when Oblique Turning with Round Tools. Part 1: Chip Area Parameters Under Variation of Side and Back Rake Angle

2015 · V. Bushlya, F. Schultheiss, et al. · Procedia CIRP · 10

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Surface morphologies of MOCVD-grown GaN films on sapphire studied by scanning tunneling microscopy

2002 · J Zhou, J.E Reddic, et al. · Applied Surface Science · 10

High-pressure study of optical transitions in strained In0.2 Ga0.8 As/GaAs multiple quantum wells

1996 · G. H. Li, A. R. Goñi, et al. · Physical review. B, Condensed matter · 10

Near ultraviolet InGaN/GaN MQWs grown on maskless periodically grooved sapphire substrates fabricated by wet chemical etching

2006 · N.S. Yu, L.W. Guo, et al. · Journal of Alloys and Compounds · 9

Growth and characterization of AlGaN∕GaN heterostructures on semi-insulating GaN epilayers by molecular beam epitaxy

2008 · F. Mei, Q. M. Fu, et al. · Journal of Applied Physics · 8

Critical Ge concentration for 2×n reconstruction appearing on GeSi covered Si(100)

1998 · L.W Guo, Q Huang, et al. · Surface Science · 8

Effect of thermal annealing on optical emission properties of low-temperature grown AlGaAs/GaAs multiple quantum wells

1996 · W. Feng, F. Chen, et al. · Applied Physics Letters · 8

Low-temperature AlGaAs/GaAs multiple quantum well structure and its application to photorefractive devices

1996 · W. Feng, Y. Yu, et al. · Applied Physics Letters · 8

Conversion of step configuration induced by strain in Si1−xGex layers deposited on vicinal Si(001) surface

1996 · J. M. Zhou, L. W. Guo, et al. · Applied Physics Letters · 8

X-ray reflectivity studies of the effect of surfactant on the growth of GeSi superlattices

1995 · Ming Li, Q. Cui, et al. · Journal of Applied Physics · 8

Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials

2001 · M. H. Zhang, L. W. Guo, et al. · Physical review. B, Condensed matter · 7

Thermal stability of cubic GaN film grown by molecular-beam epitaxy on GaAs(001)

2002 · M Xu, C.X Liu, et al. · Physics Letters A · 5

Works count: 44

Citation count: 425

H-index: 11

I10-index: 16