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Mykola Kras'ko

Observed names: KRAS'KO, M, M Kras’ko, M. Kras'ko, M. Kras’ko, M. M. Krasko, M. M. Kras’ko, M.M. Krasko, M.M. Kras’ko, Mykola M. Kras’ko, N. N. Kras’ko, Красько, М. М., М.М. Красько
ORCID: 0000-0003-3271-5003
Observed ORCID: 0000-0003-3271-5003
OpenAlex ID: A5031764878
Tin Doping of Silicon for Controlling Oxygen Precipitation and Radiation Hardness
2001 · C. Claeys, E. Simoen, et al. · Journal of The Electrochemical Society · 38
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Electrically active defects in irradiated n-type Czochralski silicon doped with group IV impurities
2005 · M L David, E Simoen, et al. · Journal of Physics Condensed Matter · 18
Influence of Tin Impurities on the Generation and Annealing of Thermal Oxygen Donors in Czochralski Silicon at 450°C
2000 · V. B. Neimash, A. Kraitchinskii, et al. · Journal of The Electrochemical Society · 18
On the Effect of Lead on Irradiation Induced Defects in Silicon
2005 · Marie-Laure David, Eddy Simoen, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 13
Effect of tin on the processes of silicon-nanocrystal formation in amorphous SiO x thin-film matrices
2014 · V. V. Voitovych, R. M. Rudenko, et al. · Semiconductors · 10
Radiation Defects and Carrier Lifetime in Tin-Doped n-Type Silicon
2001 · Eddy Simoen, Cor Claeys, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 10
DLTS Studies of high-temperature electron irradiated Cz n-Si
2004 · V. Neimash, M. Kras'ko, et al. · physica status solidi (a) · 9
Deep Levels in High-Temperature 1 MeV Electron-Irradiated n-Type Czochralski Silicon
2003 · Eddy Simoen, Joan Marc Rafí, et al. · Japanese Journal of Applied Physics · 7
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Lifetime Control in Irradiated and Annealed Cz n‐Si: Role of Divacancy‐Oxygen Defects
2019 · Mykola Kras'ko, Andrii Kolosiuk, et al. · physica status solidi (a) · 5
Nature of the nuclei for thermal donor formation in silicon (or another variant of accelerated oxygen diffusion)
1999 · V. B. Neimash, E. A. Puzenko, et al. · Semiconductors · 5
Role of the intensity of high-temperature electron irradiation in accumulation of vacancy-oxygen defects in Cz n-Si
2021 · Mykola M. Kras’ko, Andrii G. Kolosiuk, et al. · Journal of materials research/Pratt's guide to venture capital sources · 4
Influence of High Temperature Annealing on the Structure and the Intrinsic Absorption Edge of Thin-Film Silicon Doped with Tin
2013 · R.M. Rudenko, V.V. Voitovych, et al. · Ukrainian Journal of Physics · 4
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Vacancy generation in silicon in the temperature range 100–633 K under electron irradiation
2011 · Anatolii Kraitchinskii, Andrii Kolosiuk, et al. · Radiation effects and defects in solids · 4
A Deep Level Study of High-Temperature Electron-Irradiated n-Type Cz Silicon
2003 · Eddy Simoen, Cor Claeys, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 4
Radiation Damage of Carrier Lifetime and Conductivity in Sn and Pb Doped n-Si
2013 · Mykola Kras'ko, Anatolii Kraitchinskii, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 3
Influence of Tin Impurity on Degradation of Conductivity in Electron-Irradiated n-Si
2013 · M.M. Kras’ko · Ukrainian Journal of Physics · 3
Вплив домішки олова на рекомбінаційні характеристики n-кремнію при γ-опроміненні
2021 · М.М. Красько · Ukrainian Journal of Physics · 2
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Carrier Lifetime in 60Co Gamma and 1 MeV Electron‐Irradiated Tin‐Doped n‐Type Czochralski Silicon: Conditions for Improving Radiation Hardness
2021 · Mykola Kras'ko, Andrii Kolosiuk, et al. · physica status solidi (a) · 2
Formation of Nanocrystalline Silicon in Tin-Doped Amorphous Silicon Films
2020 · R. M. Rudenko, O. O. Voitsihovska, et al. · Ukrainian Journal of Physics · 2
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Effect of Tin on Structural Transformations in the Thin-Film Silicon Suboxide Matrix
2016 · V.V. Voitovych, R.M. Rudenko, et al. · Ukrainian Journal of Physics · 2
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Behavior of Hydrogen During Crystallization of Thin Silicon Films Doped with Tin
2013 · R.M. Rudenko, M.M. Kras’ko, et al. · Ukrainian Journal of Physics · 2
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Accumulation of VO Defects in N-Si at High-Temperature Pulse Electron Irradiation: Generation and Annealing Kinetics, Dependence on Irradiation Intensity
2011 · Mykola Kras'ko, Anatolii Kraitchinskii, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 2
Radiation‐Enhanced Annealing of Vacancy–Oxygen Defects in Cz n‐Si: Features of the Experiment, Factor of the Radiation Ionization, and a Possible Annealing Mechanism
2025 · Mykola Kras'ko, Andrii Kolosiuk, et al. · physica status solidi (a) · 1
Kinetics of Carrier Lifetime Degradation in High‐Temperature 1 MeV Electron‐Irradiated Cz n‐Si Associated with the Formation of Divacancy‐Oxygen Defects
2024 · Mykola Kras'ko, Andrii Kolosiuk, et al. · physica status solidi (a) · 1
Tin doping effects in silicon
2000 · SIMOEN, E, CLAEYS, C, et al. · Ghent University Academic Bibliography (Ghent University) · 1
Works count: 35
Citation count: 170
H-index: 7
I10-index: 6
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