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Yi Zhang

A comprehensive review of gallium nitride (GaN)-based gas sensors and their dynamic responses
2023 · Yang Jiang, Wenmao Li, et al. · Journal of Materials Chemistry C · 44
A High Q Value ScAlN/AlN-Based SAW Resonator for Load Sensing
2021 · Binghui Lin, Yan Liu, et al. · IEEE Transactions on Electron Devices · 38
Harnessing of Cooperative Cu⋅⋅⋅H Interactions for Luminescent Low‐Coordinate Copper(I) Complexes towards Stable OLEDs
2024 · Qizheng Zhang, Nengquan Li, et al. · Angewandte Chemie International Edition · 27
Oscillator-Network-Based Ising Machine
2022 · Yi Zhang, Yi Deng, et al. · Micromachines · 26
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Pd(II)‐TADF Emitters Featuring Multiple Intramolecular Noncovalent Interactions: Toward Organic Light‐Emitting Diodes with EQEs up to 31.5% and Operational Half‐Lifetimes Exceeding 1600 h at 3000 cd m−2
2024 · Jingling Zhang, Xiu‐Fang Song, et al. · Advanced Functional Materials · 20
Dual-Mode Hybrid Quasi-SAW/BAW Resonators With High Effective Coupling Coefficient
2020 · Yi Zhang, Jie Zhou, et al. · IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control · 18
Suppression of Short-Channel Effects in AlGaN/GaN HEMTs Using SiNx Stress-Engineered Technique
2024 · Chenkai Deng, Chuying Tang, et al. · Nanomaterials · 12
Stable and Narrowband Blue Phosphorescent OLEDs Based on Tetradentate Pt(II) Complexes Achieving EQE Close to 35% with Improved Device Lifetime
2025 · Hongyang Zhang, Manli Huang, et al. · Small · 11
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Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters
2024 · Yang Jiang, FangZhou Du, et al. · Applied Physics Letters · 11
2.86-kV vertical Cu2O/Ga2O3 heterojunction diodes with stepped double-layer structure
2025 · XiaoHui Wang, XiaoHui Wang, et al. · Journal of Alloys and Compounds · 10
Optimization of CuOx/Ga2O3 Heterojunction Diodes for High-Voltage Power Electronics
2025 · Xiaohui Wang, Mujun Li, et al. · Nanomaterials · 10
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Investigation of modified Lamé mode resonator with high coupling coefficient
2020 · Jie Zhou, Jieyu Liu, et al. · Journal of Applied Physics · 10
Low Contact Resistivity of <10 Ω·mm for Au-Free Ohmic Contact on p-GaN/AlGaN/GaN
2024 · ChuYing Tang, ChengKai Deng, et al. · IEEE Electron Device Letters · 9
MEMS Oscillators‐Network‐Based Ising Machine with Grouping Method
2024 · Yi Deng, Yi Zhang, et al. · Advanced Science · 8
Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity
2023 · Chuying Tang, Chun Fu, et al. · Applied Physics Letters · 8
High-performance β-Ga2O3 Schottky barrier diodes with Mg current blocking layer using spin-on-glass technique
2024 · MuJun Li, MingHao He, et al. · Applied Physics Letters · 7
Threshold voltage modulation on a CTL-based monolithically integrated E/D-mode GaN inverters platform with improved voltage transfer performance
2024 · Yang Jiang, FangZhou Du, et al. · Applied Physics Letters · 5
A robust Ni/Au process and mechanism for p-type ohmic contact applied to GaN p-FETs
2024 · Chuying Tang, Chun Fu, et al. · Journal of Alloys and Compounds · 5
Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment
2025 · Fangzhou Du, Yang Jiang, et al. · Applied Physics Letters · 4
Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiNx Stress-Engineering Technique
2024 · Chenkai Deng, Peiran Wang, et al. · Nanomaterials · 4
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Investigation on Gate Etching and Stability of GaN p-FETs
2024 · Chuying Tang, Fangzhou Du, et al. · IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) · 3
Electrically reconfigurable surface acoustic wave phase shifters based on ZnO TFTs on LiNbO3 substrate
2025 · Yi Zhang, Zilong Xiong, et al. · International Journal of Extreme Manufacturing · 2
High VTH and Breakdown Enhancement-Mode GaN HEMTs for Power ICs Application Using Charge Trapping Layer
2024 · Yang Jiang, Fangzhou Du, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 2
High‐Efficiency Blue TADF Palladium(II) Complexes with Ligand‐to‐Ligand Charge Transfer Excited State
2026 · Xinyu Li, Sijie Xian, et al. · Angewandte Chemie International Edition · 1
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2.3-kV β-Ga2O3 heterojunction barrier Schottky diode with Cu anode and robust thermal reliability
2025 · XiaoHui Wang, MuJun Li, et al. · Applied Physics Letters · 1
Works count: 32
Citation count: 307
H-index: 10
I10-index: 13
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