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Messai Zitouni

Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications
2019 · Touati Zine-eddine, Hamaizia Zahra, et al. · Journal of Science Advanced Materials and Devices · 71
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Design and Simulation of a Triple Absorber Layer Perovskite Solar Cell for High Conversion Efficiency
2023 · Abderrahim Yousfi, Okba Saidani, et al. · East European Journal of Physics · 43
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Numerical study of high‑performance lead‑free CsSnCl3‑based perovskite solar cells
2024 · Okba Saidani, Yousfi Abderrahim, et al. · Journal of Optics · 37
Growth and characterization of thin ZnO films deposited on glass substrates by electrodeposition technique
2010 · T. Mouet, T. Devers, et al. · Applied Surface Science · 28
DC and RF characteristics of AlGaN/GaN HEMT and MOS-HEMT
2015 · Zine-eddine Touati, Zahra Hamaizia, et al. · 22
Numerical study of 2DEG carrier density of quaternary AlInGaN-based T-gate MOSHEMT grown on UWBG-β-Ga2O3 substrate
2025 · Noual Amina, Touati Zine-eddine, et al. · Power Electronic Devices and Components · 9
Growth and characteristics of ZnO nano-aggregates electrodeposited onto p-Si(111)
2010 · Z. Messaï, Z. Ouennoughi, et al. · Applied Surface Science · 9
Numerical study of T-Gate AlGaN/AlInGaN/GaN MOSHEMT with Single and Double Barrier for THz Frequency Applications
2023 · Amina Noual, Messai Zitouni, et al. · East European Journal of Physics · 8
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Dielectric Behavior Characterization of RE/BaTiO3 Using Time Domain Spectroscopy: Application on High-Performance Dielectric Resonator Antennas
2024 · R. Chelghoum, Z. Messai, et al. · ECS Journal of Solid State Science and Technology · 4
Potentiality of zinc oxide nanosensor prepared by a new electroplating method on p-Si (1 1 1) wafer substrate
2018 · Z. Messai, T. Devers, et al. · Alexandria Engineering Journal · 3
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Normalized differential conductance to study current conduction mechanisms in MOS structures
2018 · T.H. Nouibat, Z. Messai, et al. · Microelectronics Reliability · 2
Influence of High-k Dielectric Materials on AlGaN/AlInGaN/GaN MOS-HEMT Grown on β-Ga2O3Substrate: Numerical Study
2024 · NOUAL Amina, MESSAI Zitouni, et al. · International Conference on Electrical Engineering and Automatic Control (ICEEAC) · 1
RF Performance Analysis of Conventional and Recessed Gate AlGaN/GaN MOSHEMT using β–Ga2O3 as Dielectric Layer
2023 · Noual Amina, Messai Zitouni, et al. · International Conference on Advances in Electronics, Control and Communication Systems (ICAECCS) · 1
Exploring the submillimeter wave potential: DC and AC characterization of quaternary AlInGaN-based T-gate MOSHEMT on ultrawide-bandgap β-Ga2O3 substrate
2026 · Amina Noual, Zine-eddine Touati, et al. · Next Materials
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Tri-Band Aperture-Coupled Dielectric Resonator Antenna Using (RE-BaTiO3) Composite Materials
2025 · Rachid Chelghoum, Zitouni Messai, et al. · Lecture notes in electrical engineering
Corrigendum: ‘modeling and simulation of the effect of surface roughness on the Fowler-Nordheim conduction in MOS structures’ (2025 Phys. Scr. 100 035902)
2025 · Meguellati Sabrina, Messai Zitouni, et al. · Physica Scripta
Modeling and simulation of the effect of surface roughness on the Fowler-Nordheim conduction in MOS structures
2025 · meguellati sabrina, Messai Zitouni, et al. · Physica Scripta
Investigation of Temperature and Channel Dimension Effects on CMOS Circuit Performance
2024 · Zitouni Messai, Abdelhalim Brahimi, et al. · East European Journal of Physics
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Works count: 18
Citation count: 238
H-index: 8
I10-index: 5
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