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Akira Hiroki
Observed name:
A. Hiroki
Institution:
Kyoto Institute of Technology
Observed institutions:
Panasonic (Japan),
Kyoto Institute of Technology,
Semiconductor Technology Academic Research Center (Japan)
ORCID:
0000-0002-7149-2896
Observed ORCID:
0000-0002-7149-2896
OpenAlex ID:
A5032329412
Potential design and transport property of 0.1-μm MOSFET with asymmetric channel profile
1997
·
S. Odanaka
, A. Hiroki
·
IEEE Transactions on Electron Devices
·
55
Device modeling and simulations toward sub-10 nm semiconductor devices
2002
·
N. Sano
, A. Hiroki
, et al.
·
IEEE Transactions on Nanotechnology
·
40
A mobility model for submicrometer MOSFET simulations including hot-carrier-induced device degradation
1988
·
A. Hiroki
, S. Odanaka
, et al.
·
IEEE Transactions on Electron Devices
·
35
A mobility model for submicrometer MOSFET device simulations
1987
·
A. Hiroki
, S. Odanaka
, et al.
·
IEEE Electron Device Letters
·
27
A high performance 0.1 μm MOSFET with asymmetric channel profile
2002
·
A. Hiroki
, S. Odanaka
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
25
Quarter-micrometer SPI (Self-aligned Pocket Implantation) MOSFET's and its application for low supply voltage operation
1995
·
A. Hori
, A. Hiroki
, et al.
·
IEEE Transactions on Electron Devices
·
23
A simulation study of short channel effects with a QET model based on Fermi–Dirac statistics and nonparabolicity for high-mobility MOSFETs
2015
·
Shohiro Sho
, Shinji Odanaka
, et al.
·
Journal of Computational Electronics
·
19
PDF
SMART-II: a three-dimensional CAD model for submicrometer MOSFET's
1991
·
S. Odanaka
, A. Hiroki
, et al.
·
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
·
15
Modeling and Analytical Calculation of Strain Induced by Gradual Variation of Composition in Bulk InxGa1-xAs Mixed Crystal
2004
·
Md. Rafiqul Islam
, Akira Hiroki
, et al.
·
Japanese Journal of Applied Physics
·
11
Gate-oxide thickness dependence of hot-carrier-induced degradation in buried p-MOSFET's
1992
·
A. Hiroki
, S. Odanaka
·
IEEE Transactions on Electron Devices
·
10
An analytical MOSFET model including gate voltage dependence of channel length modulation parameter for 20nm CMOS
2008
·
Akira Hiroki
, Akihiro Yamate
, et al.
·
International Conference on Electrical and Computer Engineering (ICECE)
·
9
An accurate metric to control time step of transient device simulation by matrix exponential method
2017
·
Shigetaka Kumashiro
, Tatsuya Kamei
, et al.
·
International Conference on Simulation of Semiconductor Processes and Devices
·
6
Double pocket architecture using indium and boron for sub-100 nm MOSFETs
2001
·
S. Odanaka
, A. Hiroki
, et al.
·
IEEE Electron Device Letters
·
6
Gate voltage dependence of channel length modulation for 14 nm FinFETs
2016
·
Yuki Nariai
, Akira Hiroki
·
IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
·
5
Recursive M-tree method for 3-D adaptive tetrahedral mesh refinement and its application to Brillouin zone discretization
2005
·
E.X. Wang
, M.D. Giles
, et al.
·
International Conference on Simulation of Semiconductor Processes and Devices
·
5
Analysis of Electrical Characteristics of Advanced MOSFETs by using a Quantum Energy Transport Model
2019
·
Tetsuya Hiraoka
, Akira Hiroki
·
IEEJ Transactions on Electronics Information and Systems
·
4
PDF
An Efficient and Accurate Time Step Control Method for Power Device Transient Simulation Utilizing Dominant Time Constant Approximation
2018
·
Shigetaka Kumashiro
, Tatsuya Kamei
, et al.
·
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
·
4
Experimental Study of Impact Ionization Phenomena in Sub- 0.1 µm Si Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs)
1996
·
Atsushi Hori
, Akira Hiroki
, et al.
·
Japanese Journal of Applied Physics
·
4
High carrier velocity and reliability of quarter-micron SPI (Self-aligned Pocket Implantation) MOSFETs
1992
·
Atsushi Hon
, Akira Hiroki
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
4
Analysis of Quantum Confinement in Nanosheet FETs by Using a Quantum Drift Diffusion Model
2022
·
Masashi Matsuda
, Akira Hiroki
·
IEEJ Transactions on Electronics Information and Systems
·
3
Macromodeling of operational amplifiers for sound effect circuit design
2014
·
Takaya Oyama
, Akira Hiroki
, et al.
·
IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
·
3
Modeling of Strain Induced by Compositional Variation in Wafer-Shaped Bulk Mixed Crystals
2004
·
Md. Rafiqul Islam
, Prabhat Verma
, et al.
·
Japanese Journal of Applied Physics
·
3
PDF
Analysis of In0.53Ga0.47As n-MOSFET Characteristics using Quantum Drift Diffusion Model
2023
·
Haruki Goto
, Akira Hiroki
·
IEEJ Transactions on Electronics Information and Systems
·
2
Examination of Quantum Potential Coefficient in Quantum Drift Diffusion Model
2020
·
Daiki Ito
, Akira Hiroki
·
IEEJ Transactions on Electronics Information and Systems
·
2
PDF
Macromodeling of operational amplifiers for overdrive circuit design
2015
·
Yuki Yamatoya
, Akira Hiroki
, et al.
·
IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
·
2
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Works count:
74
Citation count:
350
H-index:
10
I10-index:
10
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