Author

M. Berrabah

Observed names: BERRABAH, M, M Berrabah

Institution: University Frères Mentouri Constantine 1

Observed institutions: University Frères Mentouri Constantine 1, Centre National de la Recherche Scientifique, Institut National des Sciences Appliquées de Lyon

OpenAlex ID: A5032739876

Deconvolution of SIMS depth profiles: Towards simple and faster techniques

2008 · F. Boulsina, M. Berrabah, et al. · Applied Surface Science · 13

Electrical characteristics of GaAs grown on (Ca,Sr)F2 by molecular beam epitaxy

1987 · C. Fontaine, M. Berrabah, et al. · Journal of Crystal Growth · 6

Characterization of sub-micrometre silicon films (Si-LPCVD) heavilyin situboron-doped and submitted to treatments of dry oxidation

2002 · A A t-Kaki, M Boulakroune, et al. · Semiconductor Science and Technology · 2

Treatment of LESIMS Depth Profiles: a Procedure for Eliminating the Roughness Effect

2006 · F. Boulsina, M. Berrabah, et al.

Traitement Numerique Des Mesures Par Sonde Ionique. Application Aux Siliciures

2001 · BOULAKROUNE, M, BERRABAH, M · Revue Sciences Humaines (Université des Frères Mentouri Constantine 1)

The formation of tungsten disilicide from WSi and WCrSi structures

1992 · A. Essaadani, J.C. Dupuy, et al. · Materials Science and Engineering B

Works count: 6

Citation count: 21

H-index: 2

I10-index: 1