Author

Takashi Teramoto

Observed names: T. Teramoto, Takashi TERAMOTO, teramoto, takashi

Institution: Air Liquide Laboratories (Japan)

Observed institutions: Institut polytechnique de Grenoble, Centre National de la Recherche Scientifique, University of Tsukuba, Air Liquide Laboratories (Japan), Japanese - French lAboratory for Semiconductor physics and Technology, Université Grenoble Alpes

ORCID: 0000-0002-9368-1284

Observed ORCID: 0000-0002-9368-1284

OpenAlex ID: A5033354947

High-Quality SiO2/O-Terminated Diamond Interface: Band-Gap, Band-Offset and Interfacial Chemistry

2022 · Jesús Cañas, Daniel F. Reyes, et al. · Nanomaterials · 15

High quality SiO2/diamond interface in O-terminated p-type diamond MOS capacitors

2022 · J. Cañas, C. Dussarrat, et al. · Applied Physics Letters · 7

NF3 and F2 gas fluorination of GaN surface and Pt/GaN interface analyzed by hard X-ray photoelectron spectroscopy

2024 · Asahiko Matsuda, Takashi Teramoto, et al. · Applied Surface Science · 6

Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface

2025 · Takahiro Nagata, Asahiko Matsuda, et al. · Journal of Applied Physics · 3

Boosted growth rate using discrete reactant feeding method and novel precursor of indium oxide by atomic layer deposition

2024 · Hae Lin Yang, Hye-Mi Kim, et al. · Applied Surface Science · 3

Works count: 6

Citation count: 34

H-index: 3

I10-index: 1