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Е. А. Тарасова

Observed names: E. A. Tarasova, E.A. Тарасова, E.V. TARASOVA, Elena Tarasova, Tarasova E. A., Е.А. Тарасова
ORCID: 0009-0008-0114-5742
Observed ORCID: 0009-0008-0114-5742
OpenAlex ID: A5033366618
Compensation for the Nonlinearity of the Drain–Gate I–V Characteristic in Field-Effect Transistors with a Gate Length of ~100 nm
2020 · E. A. Tarasova, S. V. Obolensky, et al. · Semiconductors · 8
Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation
2016 · E. A. Tarasova, A. V. Khananova, et al. · Semiconductors · 6
Modeling of high-power HEMT irradiated with high-energy photons
2013 · E. A. Tarasova, D. S. Demidova, et al. · Semiconductors · 6
Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors
2016 · E. A. Tarasova, E. S. Obolenskaya, et al. · Semiconductors · 5
Analysis of the Effect of Spacer Layers on Nonlinear Distortions of the Current–Voltage Characteristics of GaAlAs/InGaAs pHEMTs
2021 · E. A. Tarasova, S. V. Khazanova, et al. · Semiconductors · 3
Analysis of the Behavior of Nonequilibrium Semiconductor Structures and Microwave Transistors During and After Pulsed γ- and γ-Neutron Irradiation
2018 · M. M. Venediktov, E. A. Tarasova, et al. · Semiconductors · 3
Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation
2017 · E. A. Tarasova, S. V. Obolensky, et al. · Semiconductors · 3
Теоретические и экспериментальные исследования вольт-амперных и вольт-фарадных характеристик HEMT структур и полевых транзисторов
2016 · Е.А. Тарасова, Е.С. Оболенская, et al. · Физика и техника полупроводников · 3
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A Comprehensive Study of Radiation Defect Clusters in GaAs Structures after Neutron Irradiation
2021 · S. V. Obolenskii, E. V. Volkova, et al. · Technical Physics Letters · 2
Экспериментальные исследования модификации характеристик GaAs-структур с контактами Шоттки после воздействия быстрых нейтронов
2021 · Е.В. Волкова, А.Б. Логинов, et al. · Физика и техника полупроводников · 2
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Simulation of the Response of a Low-Barrier Mott Diode to the Influence of Heavy Charged Particles from Outer Space
2021 · A. S. Puzanov, V. V. Bibikova, et al. · Technical Physics Letters · 1
Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account
2016 · E. S. Obolenskaya, E. A. Tarasova, et al. · Semiconductors · 1
Changing the Category of a Crime (part 6 of Article 15 of the Criminal Code of the Russian Federation) and Criminal Legal Encouragement of the Guilty Person
2026 · E.V. TARASOVA · Правопорядок: история, теория, практика
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Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter
2024 · O. L. Golikov, I. Yu. Zabavichev, et al. · Микроэлектроника
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Analysis of Nonlinear Distortions of Dphemt Structures Based on a GaAs/InGaAs Compound with Double-Sided Delta-Doping
2024 · O. L. Golikov, N. E. Kodochigov, et al. · Микроэлектроника
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Silicon-on-Insulator Structures Microtopography Transformations Features after Photonic and Corpuscular Radiation Exposure
2024 · B. A. Loginov, D. Yu. Blinnikov, et al. · Technical Physics
Electron Transport in a Bipolar Transistor with a Superlattice in the Emitter
2024 · O. L. Golikov, I. Yu. Zabavichev, et al. · Russian Microelectronics
Analysis of Nonlinear Distortions of DpHEMT Structures Based on a GaAs/In0.53Ga0.47As Compound with Double-Sided Delta-Doping
2024 · O. L. Golikov, N. E. Kodochigov, et al. · Russian Microelectronics
Calculating Current–Voltage Characteristics with Negative Differential Conductivity Sections of Superlattices Based on a GaAs/AlAs Compound with Different Numbers of Periods
2023 · S. V. Khazanova, O. L. Golikov, et al. · Bulletin of the Russian Academy of Sciences Physics
Особенности трансформации микрорельефа структур "кремний на изоляторе" при воздействии фотонных и корпускулярных излучений
2023 · Б.А. Логинов, Д.Ю. Блинников, et al. · Журнал технической физики
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Analysis of nonlinear distortions of DpHEMT structures based on the GaAs/InGaAs compound with double-sided delta-doping
2022 · Tarasova E. A., Khazanova S. V., et al. · Физика и техника полупроводников
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Experimental Studies of Modification of the Characteristics of GaAs Structures with Schottky Contacts after Exposure to Fast Neutrons
2021 · E. V. Volkova, A. B. Loginov, et al. · Semiconductors
Modeling the Response of a Microwave Low-Barrier Uncooled Mott Diode to the Action of Heavy Ions of Outer Space and Femtosecond Laser Pulses
2021 · A. S. Puzanov, V. V. Bibikova, et al. · Semiconductors
Анализ влияния спейсерных слоев на нелинейные искажения вольт-амперных характеристик pHEMT на основе соединения GaAlAs/InGaAs
2021 · Е.А. Тарасова, C.В. Хазанова, et al. · Физика и техника полупроводников
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The Physical Topological Modeling Of Single Radiation Effects In Submicron Ultrahigh-Frequency Semiconductor Diode Structures With Taking In Account The Heating Of An Electron-Hole Gas In The Charged Particle Track
2021 · Elena Tarasova · The ...European modeling & simulation symposium
Works count: 27
Citation count: 43
H-index: 4
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