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Xuanqi Chen
Observed name:
Chen Xuanqi
Institution:
National University of Singapore
Observed institution:
National University of Singapore
ORCID:
0009-0002-8620-5041
Observed ORCID:
0009-0002-8620-5041
OpenAlex ID:
A5033403876
Indium-Tin-Oxide Thin-Film Transistors With High Field-Effect Mobility (129.5 cm 2 /V⋅s) and Low Thermal Budget (150 °C)
2023
·
Kaizhen Han
, Yuye Kang
, et al.
·
IEEE Electron Device Letters
·
30
BEOL-Compatible High-Performance Indium-Tin-Oxide Transistors Enabled by Quantum Confinement-Engineered Properties
2024
·
Yuye Kang
, Kaizhen Han
, et al.
·
IEEE Transactions on Electron Devices
·
12
Top-Gate Indium-Tin-Oxide Power Transistors Featuring High Breakdown Voltage of 156 V
2024
·
Jiawei Xie
, Yuxuan Wang
, et al.
·
IEEE Electron Device Letters
·
11
Fluorine Plasma Treatment-Enabled ITO Transistors: Excellent Reliability and Comprehensive Understanding of Temperature Dependence from 77 $\mathbf{K}$ to 375 $\mathbf{K}$
2024
·
Xuanqi Chen
, Gan Liu
, et al.
·
IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
·
11
BEOL-Compatible ITO FET with Ultra-Short Channel Length of 5 nm
2025
·
Yuxuan Wang
, Jiawei Xie
, et al.
·
8
First Demonstration of Fluorine-Treated IGZO FETs with Record-Low Positive Bias Temperature Instability $\left(\left\vert \Delta V_{\text{TH}}\right\vert<44 \text{mV}\right)$ at an Elevated Temperature (395 K)
2025
·
Baoshan Tang
, Xuanqi Chen
, et al.
·
6
Unveiling the Intricate Dynamic Charactristics of FeFETs with a MFMIS Structure: Experiment and Modeling
2024
·
Xiaolin Wang
, Zijie Zheng
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
6
BEOL-compatible Te-TeOx p-FETs with channel length down to 50 nm at cryogenic temperatures
2025
·
Ying Xu
, Yiyuan Sun
, et al.
·
Applied Physics Letters
·
5
Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5×10−10 Ω-cm2 ρc from Cryogenic (5 K) to Room Temperature
2023
·
Gerui Zheng
, Yuxuan Wang
, et al.
·
IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
·
5
BEOL-Compatible Amorphous Oxide Semiconductor High-Voltage Transistors Achieving BFoM Beyond the GaAs Limit
2025
·
Yuxuan Wang
, Jiawei Xie
, et al.
·
IEEE Electron Device Letters
·
3
Uncovering True DIBL in Oxide-Semiconductor FETs: Impact of Negative Bias Stress and its Significance in 2T0C DRAM Retention
2025
·
Yuye Kang
, Kaizhen Han
, et al.
·
3
Efficient Responsivity Enhancement of Surface-Illuminated InGaAs Avalanche Photodiode by Photon Trapping on the SOI Substrate
2025
·
Rui Shao
, Jishen Zhang
, et al.
·
IEEE Transactions on Electron Devices
·
2
First Photon-Trapping InGaAs Avalanche Photodiode and its Integration on the SOI Platform
2024
·
Rui Shao
, Jishen Zhang
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
2
Impact of Passivation on Thermal Stability of AlGaN/GaN HEMTs Under High-Temperature Annealing
2024
·
Gerui Zheng
, Xuanqi Chen
, et al.
·
IEEE International Conference on IC Design and Technology (ICICDT)
·
2
First Demonstration of Monolithic 3D Integrated Si PICs and BEOL Oxide Semiconductor EICs for Electronic-Photonic Compute-in-Memory (CiM)
2025
·
Rui Shao
, Yue Chen
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
1
First Demonstration of 3D Monolithic-Integrated BEOL OSFETs on GaN HEMTs: CEO-GaN
2025
·
Gerui Zheng
, Hanjie Li
, et al.
·
1
Indium-Tin-Oxide Transistor with Maximum Transconductance Over $1100 \mu \mathrm{S} / \mu \mathrm{m}$ and Cut-Off Frequency of 23 GHz
2025
·
Yuxuan Wang
, Jiawei Xie
, et al.
·
IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
·
1
Parallel In-Memory Dot Product Engine Using Non-Volatile Ferroelectric Microring Resonator Weight Bank for High-Throughput Parallel Photonic Convolutional Accelerator
2024
·
Yue Chen
, Rui Shao
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
1
Gate-Side Hydrogen Regulation by an In Situ NiO Interlayer in ITO FETs Achieving Sub-5 mV ΔV TH @ 1 ks Under E OX of 5 MV/cm and 415 K
2026
·
Xuanqi Chen
, Gan Liu
, et al.
·
IEEE Electron Device Letters
Fluorine Plasma-Treated ITO Transistors: Reliability and Temperature Dependence From 77 to 375 K
2026
·
Xuanqi Chen
, Yuye Kang
, et al.
·
IEEE Transactions on Electron Devices
Room Temperature Fluorination: A Cost-Effective V TH Engineering Solution for BEOL Oxide Semiconductor FETs Enabling Inverters With Record Gain of 2687 and High Noise Margin
2026
·
Xuanqi Chen
, Gan Liu
, et al.
·
IEEE Electron Device Letters
3-D Monolithic-Integrated BEOL-Compatible Oxide Semiconductor FETs on GaN HEMTs: CEO-GaN
2026
·
Gerui Zheng
, Hanjie Li
, et al.
·
IEEE Transactions on Electron Devices
First Demonstration of Fluorine-Treated IGZO FETs with Record-Low Positive Bias Temperature Instability at an Elevated Temperature (395 K)
2025
·
Baoshan Tang
, Xuanqi Chen
, et al.
·
National University of Singapore
Novel Field-Plate Integrated Mesa-Type InGaAs/InP Avalanche Photodiode
2022
·
Chen Xuanqi
, Jishen Zhang
, et al.
·
International Conference on IC Design and Technology
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Works count:
24
Citation count:
110
H-index:
6
I10-index:
4
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