Author

M. Chellali

Observed names: Chellali Mohammed, Chellali, M.

Institution: Université Djilali de Sidi Bel Abbès

Observed institution: Université Djilali de Sidi Bel Abbès

OpenAlex ID: A5034237939

Passivation of III-V compounds used for metal-insulator-InP(100) structures

1998 · L. Bideux, S. Merle, et al. · Surface and Interface Analysis · 5

Hafnium dioxide effect on the electrical properties of M/n-GaN structure

2020 · Sadoun Ali, Mansouri Sedik, et al. · Materials Science-Poland · 3

Electrical Characterization and Electronic Transport Modelization in the InN/InP Structures

2009 · Z. Benamara, N. Mecirdi, et al. · Sensor Letters · 1

Two-dimensional simulation of the effects of grain boundaries on the C-V characteristics of P+N polysilicon diodes

2005 · Amrani, M., Benamara, Z., et al. · HAL

Study and improvement of interfacial properties in a MIS structure based on p-type InP.

2004 · Chellali, M., Tizi, S., et al. · HAL

Works count: 5

Citation count: 9

H-index: 2

I10-index: