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Author

S. Yu. Karpov

Observed names: Karpov, S. Yu., S Y Karpov, S Yu Karpov, S. Karpov, S. Y. Karpov, S. Yu Karpov, S.Yu Karpov, S.Yu. Karpov, S.Yu. Karpova, Sergey Karpov, Sergey Y. Karpov, Sergey Yu Karpov, Sergey Yu. Karpov
Observed institutions: Saratov State University, Centre National de la Recherche Scientifique, Russian Academy of Sciences, Aston University, Yale University, University of Florida, Saint Petersburg State Electrotechnical University, Centre d’Élaboration de Matériaux et d’Études Structurales, Systems and Technology Research (United States), Osram Opto Semiconductors, Siberian Federal University, Nagoya University, Jeonbuk National University, Ioffe Institute
ORCID: 0000-0001-5593-4167
Observed ORCID: 0000-0001-5593-4167
OpenAlex ID: A5034430024
ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review
2014 · Sergey Karpov · Optical and Quantum Electronics · 257
Suppression of phase separation in InGaN due to elastic strain
1998 · S. Yu. Karpov · MRS Internet Journal of Nitride Semiconductor Research · 209
Dislocation effect on light emission efficiency in gallium nitride
2002 · Sergey Yu. Karpov, Yuri N. Makarov · Applied Physics Letters · 193
Impact of surface recombination on efficiency of III‐nitride light‐emitting diodes
2016 · Kirill A. Bulashevich, Sergey Yu. Karpov · physica status solidi (RRL) - Rapid Research Letters · 165
From Large‐Size to Micro‐LEDs: Scaling Trends Revealed by Modeling
2017 · Sergey S. Konoplev, Kirill A. Bulashevich, et al. · physica status solidi (a) · 162
Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes
2014 · Ilya E. Titkov, Sergey Yu. Karpov, et al. · IEEE Journal of Quantum Electronics · 120
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GaN evaporation in molecular-beam epitaxy environment
1999 · N. Grandjean, J. Massies, et al. · Applied Physics Letters · 115
Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap
2016 · Felix Nippert, Sergey Yu. Karpov, et al. · Applied Physics Letters · 108
Is Auger recombination responsible for the efficiency rollover in III‐nitride light‐emitting diodes?
2008 · K. A. Bulashevich, S. Yu. Karpov · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 100
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Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT
2000 · M. Selder, L. Kadinski, et al. · Journal of Crystal Growth · 82
On mechanisms of sublimation growth of AlN bulk crystals
2000 · A.S Segal, S.Yu Karpov, et al. · Journal of Crystal Growth · 74
Novel approach to simulation of group-III nitrides growth by MOVPE
1999 · S. Yu. Karpov, V. G. Prokofyev, et al. · MRS Internet Journal of Nitride Semiconductor Research · 73
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Simulation of visible and ultra-violet group-III nitride light emitting diodes
2005 · K.A. Bulashevich, V.F. Mymrin, et al. · Journal of Computational Physics · 66
Carrier localization in InGaN by composition fluctuations: implication to the “green gap”
2017 · Sergey Yu. Karpov · Photonics Research · 63
Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
1999 · R. A. Talalaev, E. V. Yakovlev, et al. · MRS Internet Journal of Nitride Semiconductor Research · 60
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Effect of Die Shape and Size on Performance of III-Nitride Micro-LEDs: A Modeling Study
2018 · Kirill A. Bulashevich, Sergey S. Konoplev, et al. · Photonics · 59
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Statistical model of ternary group-III nitrides
2004 · Sergey Yu. Karpov, Natalya I. Podolskaya, et al. · Physical Review B · 59
Mechanism of stress relaxation in (0001) InGaN/GaN via formation of V-shaped dislocation half-loops
2013 · A. V. Lobanova, A. L. Kolesnikova, et al. · Applied Physics Letters · 58
Simulation of Sublimation Growth of SiC Single Crystals
1997 · S.Yu. Karpov, Yu.N. Makarov, et al. · physica status solidi (b) · 58
Optimal ways of colour mixing for high‐quality white‐light LED sources
2014 · Kirill A. Bulashevich, Alexey V. Kulik, et al. · physica status solidi (a) · 56
Thermodynamic properties of group-III nitrides and related species
1998 · I. N. Przhevalskii, S. Yu. Karpov, et al. · MRS Internet Journal of Nitride Semiconductor Research · 54
Efficiency droop suppression in InGaN‐based blue LEDs: Experiment and numerical modelling
2012 · D. A. Zakheim, A. S. Pavluchenko, et al. · physica status solidi (a) · 53
Analysis of sublimation growth of bulk SiC crystals in tantalum container
2000 · S.Yu Karpov, A.V Kulik, et al. · Journal of Crystal Growth · 53
Propagation and transformation of electromagnetic waves in one-dimensional periodic structures
1993 · S Yu Karpov, S N Stolyarov · Physics-Uspekhi · 50
On low temperature kinetic effects in metal–organic vapor phase epitaxy of III–V compounds
2001 · R.A. Talalaev, E.V. Yakovlev, et al. · Journal of Crystal Growth · 49
Works count: 224
Citation count: 4,956
H-index: 38
I10-index: 118
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