Author

Ralf Lerner

Observed names: Lerner, Ralf, R. Lerner, U. Eckoldt R. Lerner

Observed institutions: Technische Universität Ilmenau, X-Fab (Germany)

ORCID: 0000-0002-5875-5102

Observed ORCID: 0000-0002-5875-5102

OpenAlex ID: A5034566277

Integration of GaN HEMTs onto Silicon CMOS by micro Transfer Printing

2016 · Ralf Lerner, Stefan Eisenbrandt, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 17

Heterogeneous Integration of Microscale Gallium Nitride Transistors by Micro-Transfer-Printing

2016 · Ralf Lerner, Stefan Eisenbrandt, et al. · IEEE Electronic Components and Technology Conference (ECTC) · 13

Optimized Deep Trench Isolation for High Voltage Smart Power Process

2005 · U. Eckoldt R. Lerner · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 12

Time Dependent Isolation Capability of High Voltage Deep Trench Isolation

2008 · Ralf Lerner, Uwe Eckoldt, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 11

Flexible and Scalable Heterogeneous Integration of GaN HEMTs on Si‐CMOS by Micro‐Transfer‐Printing

2017 · Ralf Lerner, Stefan Eisenbrandt, et al. · physica status solidi (a) · 10

Optimization of trench manufacturing for a new high-voltage semiconductor technology

2010 · Matthias Fritzsch, Michael Schramm, et al. · IEEE International Symposium on Industrial Electronics (ISIE) · 9

Technology for Power Integrated Circuits with Multiple Vertical Power Devices

2006 · P. Igic, P. Holland, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 8

Characteristics of Hetero-Integrated GaN-HEMTs on CMOS Technology by Micro-Transfer-Printing

2021 · Richard Reiner, Ralf Lerner, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 5

Modeling the Leakage Current of Dielectric Isolation Structures in a High-Voltage Semiconductor Technology

2007 · Andre Lange, Steffen Heinz, et al. · IEEE International Symposium on Industrial Electronics (ISIE) · 5

Trench isolated thick SOI process for various optical and high voltage devices

2013 · Ralf Lerner, Daniel Gaebler, et al. · International Semiconductor Conference Dresden-Grenoble (ISCDG) · 3

Comparison of different device concepts to increase the operating voltage of a trench isolated SOI technology to above 900V

2015 · Ralf Lerner, Klaus Schottmann, et al. · Facta universitatis - series Electronics and Energetics · 2

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A trench isolated thick SOI process as platform for various electrical and optical integrated devices

2013 · R. Lerner, D. Gaebler, et al. · IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference · 2

Device engineering for a modular 650 V transistor assortment

2011 · Ralf Lerner, Klaus Schottmann, et al. · International Semiconductor Conference Dresden-Grenoble (ISCDG) · 2

Single trench isolation for a 650 V SOI technology with low mechanical stress

2010 · G. Kittler, R. Lerner, et al. · IEEE International SOI Conference (SOI) · 2

PT-IGBT and freewheeling diode for 3.3 kV using lifetime control techniques and low-efficiency emitters

2003 · M. Netzel, R. Lerner, et al. · IEEE International Conference on Microelectronics (MIEL) · 2

Commercial Sweet Spots for GaN and CMOS Integration by Micro-Transfer-Printing

2021 · Ralf Lerner, Nis Hauke Hansen · International Seminar on Power Semiconductors (ISPS) · 1

3.3 kV IGBT and diode chipset using lifetime control techniques and low-efficiency emitters

2002 · Mario Netzel, Ralf Lerner, et al. · Facta universitatis - series Electronics and Energetics

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Works count: 19

Citation count: 104

H-index: 7

I10-index: 5