Author

M. Aoucher

Observed names: Aoucher, M., M Aoucher

Observed institution: University of Sciences and Technology Houari Boumediene

OpenAlex ID: A5034593665

Hydrogenated amorphous silicon deposited by pulsed DC magnetron sputtering. Deposition temperature effect

2008 · A. Ben Abdelmoumen, R. Cherfi, et al. · Thin Solid Films · 19

Study of the solid phase crystallization behavior of amorphous sputtered silicon by X-ray diffraction and electrical measurements

2002 · G Farhi, M Aoucher, et al. · Solar Energy Materials and Solar Cells · 19

Acceptor and donor centers introduced by oxygen ionosorption at the a-Si:H film surface

1996 · M. Aoucher, T. Mohammed-Brahim, et al. · Journal of Applied Physics · 16

Structural, optical and electrical properties of hydrogenated amorphous silicon germanium (a-Si1−xGex) deposited by DC magnetron sputtering at high rate

2006 · A. Fedala, R. Cherfi, et al. · Materials Science in Semiconductor Processing · 13

Hydrogenated amorphous silicon nitride deposited by DC magnetron sputtering

2006 · K. Mokeddem, M. Aoucher, et al. · Superlattices and Microstructures · 12

Crystallization of hydrogenated amorphous silicon deposited at high rate by dc magnetron sputtering

1998 · M Aoucher, G Farhi, et al. · Journal of Non-Crystalline Solids · 7

Numerical simulation of low-field thermally stimulated conductivity in a-Si:H

2000 · T Smaı̈l, M Aoucher, et al. · Journal of Non-Crystalline Solids · 4

Deposition temperature effects on the characteristics of a‐Si:H deposited by pulsed DC magnetron sputtering

2009 · R. Cherfi, A. Abdelmoumene, et al. · physica status solidi (a) · 3

Correlation between Physicochemical and Electrical Properties of Hydrogenated Amorphous Silicon Doped with Boron: Effect of Thermal Annealing

2009 · H.Y. Seba, R. Cherfi, et al. · Materials science forum · 3

Hydrogen interaction on metal/hydrogenated amorphous silicon Schottky structures: adsorption/desorption effects

2001 · K. Laïhem, R. Cherfi, et al. · Thin Solid Films · 3

Oxygen adsorption-desorption effect on the electrical properties of a-Si:H layers

1995 · M. Aoucher, T. Mohammed-Brahim, et al. · Sensors and Actuators B Chemical · 3

Electrical conductance variation of a-Si: H films during a temperature programmed desorption

1993 · M. Aoucher, T. Mohammed-Brahim, et al. · Journal of Physics and Chemistry of Solids · 3

Structural Analysis of Diamond‐Like Carbon Films Deposited by RF (13.56 MHz) in a Methane Gas Plasma Atmosphere

2005 · M. Ouchabane, M. Aoucher, et al. · Plasma Processes and Polymers · 2

Thin films of hydrogenated amorphous silicon and polycrystalline silicon; oxygen and hydrogen interaction effects on electrical properties

1999 · M Aoucher, K Laı̈hem · Sensors and Actuators B Chemical · 2

Thin Films Hydrogenated Silicon Deposited by Direct Current Magnetron Sputtering at High Rate

1999 · R. Cherfi, G. Farhi, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 2

Electronic Transport Properties of High Deposition Rate a-Si:H Material

1991 · T. Mohammed-Brahim, A. Rahal, et al. · Springer eBooks · 2

Numerical simulation of a low- and a high-electric-field photocurrent decay in a-Si:H

2006 · A. Allag, T. Smaïl, et al. · Journal of Non-Crystalline Solids · 1

Comparison of Deposited Polycrystalline Films and Crystallized Silicon from a-Si:H Films

2001 · G. Farhi, R. Cherfi, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 1

Hydrogenated amorphous silicon deposited by DC magnetron sputtering at high temperature

2001 · R. Cherfi, G. Farhi, et al. · Thin Solid Films · 1

Study of Polysilicon Produced by Solid Phase Crystallization of Hydrogenated Amorphous Silicon Deposited at High Rate

1999 · G. Farhi, M. Aoucher, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 1

The Numerical Simulation of the Constant Photocurrent Method (cpm) in Hydrogenated Amorphous Silicon

2009 · K. Hammoudi, Abdelkrim Fedala, et al. · The African review of physics

Effet of the substrate holder bias voltage on the a-Si :H properties deposited by DC magnetron sputtering

2007 · Benabdelmoumen, A., Cherfi, Rabah, et al. · HAL

Works count: 23

Citation count: 117

H-index: 6

I10-index: 5