Get started
Author

Rana Walied Ahmad

Observed names: Ahmad, Rana Walied, R. Walied Ahmad
ORCID: 0000-0002-0445-8110
Observed ORCID: 0000-0002-0445-8110
OpenAlex ID: A5035056058
Effect of the Threshold Kinetics on the Filament Relaxation Behavior of Ag‐Based Diffusive Memristors
2021 · Solomon Amsalu Chekol, Stephan Menzel, et al. · Advanced Functional Materials · 138
Influence of humidity on the resistive switching of hexagonal boron nitride-based memristors
2025 · Lukas Völkel, Rana Walied Ahmad, et al. · npj 2D Materials and Applications · 8
PDF
Threshold switching in vertically aligned MoS2/SiOx heterostructures based on silver ion migration
2025 · Jimin Lee, Rana Walied Ahmad, et al. · npj 2D Materials and Applications · 7
PDF
Variability-aware modeling of electrochemical metallization memory cells
2024 · Rana Walied Ahmad, Rainer Waser, et al. · Neuromorphic Computing and Engineering · 7
Analysis of VMM Operations on 1S1R Crossbar Arrays and the Influence of Wire Resistances
2022 · Rana Walied Ahmad, Dirk Wouters, et al. · IEEE International Symposium on Circuits and Systems proceedings · 6
Intermediate Resistive State in Wafer‐Scale Vertical MoS 2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications
2025 · Yuan Fa, Milan Buttberg, et al. · Advanced Functional Materials · 5
PDF
A Comprehensive Compact Model for Multilevel Switching in TaOx-Based Memristive 1T-1R Cells
2025 · Seokki Son, Ankit Bende, et al. · IEEE Access · 4
Reduced Variability in Threshold Switches Using Heterostructures of SiO x and Vertically Aligned MoS 2
2026 · Jimin Lee, Rana Walied Ahmad, et al. · Advanced Electronic Materials · 2
NEUROTEC I: Neuro-inspired Artificial Intelligence Technologies for the Electronics of the Future
2022 · Melvin Galicia, Stephan Menzel, et al. · Design, Automation, and Test in Europe · 1
A Device‐Level Compact Model for Mushroom‐Type Phase Change Memory
2026 · Menzel, Stephan, Kersting, Benedikt, et al. · JuSER Publikationsportal
Reduced variability in threshold switches using heterostructures of siox and vertically aligned mos2
2026 · Lee, Jimin, Ahmad, Rana Walied, et al. · Advanced Electronic Materials
Modeling and simulation of electrochemical metallization memory cells for neuromorphic passive crossbar architecture
2026 · Ahmad, Rana Walied · RWTH Publications (RWTH Aachen)
Investigation of the transient behaviour of volatile electrochemical metallization cells operated in integrate-and-fire neuron circuits
2026 · Rasbach, Julius, Ma, Yao, et al. · JuSER (Forschungszentrum Jülich)
A Device‐Level Compact Model for Mushroom‐Type Phase Change Memory
2025 · Stephan Menzel, Benedikt Kersting, et al. · Advanced Electronic Materials
PDF
Reduced Variability in Threshold Switches Using Heterostructures of SiO x and Vertically Aligned MoS 2
2025 · Lee, Jimin, Ahmad, Rana Walied, et al. · arXiv (Cornell University)
PDF
Compact Modeling of Volatile‐Switching Electrochemical Metallization Memory Cells by Means of the Electromotive Force
2025 · Rana Walied Ahmad, Solomon Amsalu Chekol, et al. · Advanced Intelligent Systems
A device-level compact model for mushroom-type phase change memory
2025 · Menzel, Stephan, Kersting, Benedikt, et al. · arXiv (Cornell University)
PDF
Influence of Humidity on the Resistive Switching of Hexagonal Boron Nitride-Based Memristors
2025 · Völkel, Lukas, Ahmad, Rana Walied, et al. · arXiv (Cornell University)
PDF
Intermediate Resistive State in Wafer-Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications
2025 · Fa, Yuan, Buttberg, Milan, et al. · RWTH Publications (RWTH Aachen)
Threshold switching in vertically aligned MoS2/SiOx heterostructures based on silver ion migration
2025 · Lee, Jimin, Ahmad, Rana Walied, et al. · OPUS Publication Server of the University of Stuttgart (University of Stuttgart)
JART v-ECM v1
2025 · Rana Walied Ahmad, Stephan Menzel · JuSER (Forschungszentrum Jülich)
JART ECM v1 var
2025 · Rana Walied Ahmad, Stephan Menzel · JuSER (Forschungszentrum Jülich)
Variability-Aware Compact Modelling and Model Parameter Study of Electrochemical Metallization Memory Cells
2024 · Ahmad, Rana Walied, Waser, Rainer, et al. · RWTH Publications (RWTH Aachen)
Works count: 31
Citation count: 178
H-index: 5
I10-index: 1
Year
Topic
Type