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Zahra Ahangari
Observed names:
Ahangari, Zahra,
Z. Ahangari,
ZAHRA AHANGARI
Observed institutions:
Islamic Azad University, Tehran,
Islamic Azad University, Science and Research Branch,
University of Tehran,
Islamic Azad University Shahr-e-Rey
ORCID:
0000-0002-1095-3150
Observed ORCID:
0000-0002-1095-3150
OpenAlex ID:
A5035116631
Performance assessment of dual material gate dielectric modulated nanowire junctionless MOSFET for ultrasensitive detection of biomolecules
2016
·
Zahra Ahangari
·
RSC Advances
·
80
Design and simulation of a gas sensitive junctionless FinFET based on conducting polymer as the gate material
2022
·
Farzad Mehrdad
, Zahra Ahangari
·
Physica Scripta
·
10
PDF
Design and analysis of energy efficient semi-junctionless n+n+p heterojunction p-channel tunnel field effect transistor
2019
·
Zahra Ahangari
·
Materials Research Express
·
10
PDF
Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap
2016
·
Mohsen Mahmoudi
, Zahra Ahangari
, et al.
·
Chinese Physics B
·
10
PDF
Performance investigation of steep-slope core–shell nanotube indium nitride electron–hole bilayer tunnel field effect transistor
2019
·
Zahra Ahangari
·
Applied Physics A
·
8
Performance optimization of a nanoscale GaSb P-channel electron-hole bilayer tunnel field effect transistor using metal gate workfunction engineering
2019
·
Ali Masoudi
, Zahra Ahangari
, et al.
·
Materials Research Express
·
7
Performance investigation of a semi‐junctionless type II heterojunction tunnel field effect transistor in nanoscale regime
2018
·
Zahra Ahangari
·
Micro & Nano Letters
·
6
Design and simulation of a nano biosensor based on amorphous indium gallium zinc oxide (a-IGZO) thin film transistor
2024
·
Zahra Ahangari
·
Semiconductor Science and Technology
·
5
Feasibility Study of Tuning the Threshold Voltage of Nanoscale Fin-shaped Field Effect Transistor (FinFET) via Metal Gate Workfunction Engineering
2021
·
Farzad Mehrdad
, Zahra Ahangari
·
Silicon
·
5
Impact of gate sidewall angle on the electrical characteristics of V-shaped gate III-nitride HEMTs: An investigation into self-heating and geometrical effects
2021
·
Zeynab Kurd
, Zahra Ahangari
, et al.
·
Journal of Computational Electronics
·
5
Design and performance optimization of thin film tin monoxide (SnO)/silicon electron–hole bilayer tunnel field-effect transistor
2020
·
Zahra Ahangari
·
Journal of Computational Electronics
·
5
Band structure effect on the electron current oscillation in ultra-scaled GaSb Schottky MOSFET: tight-binding approach
2013
·
Zahra Ahangari
, Morteza Fathipour
·
Journal of Computational Electronics
·
5
Tunnel FET : Principles and Operations
2024
·
Zahra Ahangari
·
4
PDF
Tight-binding study of quantum transport in nanoscale GaAs Schottky MOSFET
2013
·
Zahra Ahangari
, Morteza Fathipour
·
Chinese Physics B
·
4
Asyammetric gate oxide thickness technology for reduction of Gate Induced Drain Leakage current in nanoscale single gate SOI MOSFET
2008
·
Morteza Fathipour
, Fatemeh Kohani
, et al.
·
Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices/Proceedings
·
4
Boosting efficiency in dual-absorber RbPbBr3 perovskite solar cell: the role of two-dimensional GeS and SnS2 as electron transport layers
2024
·
Shahram Rafiee Rafat
, Zahra Ahangari
, et al.
·
Physica Scripta
·
3
A novel voltage controllable Schmitt trigger in nanoelectronic and its innovative applications
2024
·
Afshin Alimoradi
, Seied Ali Hosseini
, et al.
·
AEU - International Journal of Electronics and Communications
·
2
Performance optimization of a nanotube core–shell semi-junctionless p+p+n heterojunction tunnel field effect transistor
2020
·
Zahra Ahangari
·
Indian Journal of Physics
·
2
Tight-binding analysis of current oscillation in nanoscale In0.53Ga0.47As Schottky MOSFET
2013
·
Zahra Ahangari
, Morteza Fathipour
·
Journal of Physics D Applied Physics
·
2
PDF
Impact of Geometrical and Process Design Parameters on the Performance of Schottky Barrier Reconfigurable Field Effect Transistor
2023
·
Hamid Reza Heydari
, Zahra Ahangari
, et al.
·
Iranian International Conference on Microelectronics (IICM)
·
1
Performance Optimization and Sensitivity Analysis of Junctionless FinFET with Asymmetric Doping Profile
2020
·
Zahra Ahangari
, Ehsan Asadi
, et al.
·
Journal of Nanoanalysis
·
1
Design and Sensitivity Analysis of Steep-Slope Bi-Channel Vertical Tunnel Field Effect Transistor
2020
·
Zahra Ahangari
, Somaye Mahmodi
·
Silicon
·
1
Impact of indium mole fraction on the quantum transport of ultra-scaled In x Ga1–x As double-gate Schottky MOSFET: tight-binding approach
2016
·
Zahra Ahangari
·
Applied Physics A
·
1
Performance assessment of nanoscale Schottky MOSFET as resonant tunnelling device: Non-equilibrium Green’s function formalism
2013
·
ZAHRA AHANGARI
, MORTEZA FATHIPOUR
·
Pramana
·
1
Impact of channel thickness on the electrical characteristics of nanoscale Double Gate SOI MOSFET with metal source-drain
2008
·
Morteza Fathipour
, Zahra Ahangari
·
Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices/Proceedings
·
1
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Works count:
42
Citation count:
182
H-index:
6
I10-index:
4
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