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C.M. Yih
Observed names:
C. M. Yih,
C.-M. Yih,
Cherng-Ming Yih
Institution:
Macronix International (Taiwan)
Observed institutions:
National Yang Ming Chiao Tung University,
Macronix International (Taiwan)
OpenAlex ID:
A5035202779
A unified approach to profiling the lateral distributions of both oxide charge and interface states in n-MOSFET's under various bias stress conditions
1997
·
Shui-Ming Cheng
, Cherng-Ming Yih
, et al.
·
IEEE Transactions on Electron Devices
·
31
A new approach to simulating n-MOSFET gate current degradation by including hot-electron induced oxide damage
1998
·
Cherng-Ming Yih
, Shui-Ming Cheng
, et al.
·
IEEE Transactions on Electron Devices
·
18
A Spice-compatible flash EEPROM model feasible for transient and program/erase cycling endurance simulation
2003
·
S.S. Chung
, C.-M. Yih
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
17
Performance and reliability evaluations of p-channel flash memories with different programming schemes
2002
·
S.S. Chung
, S.N. Kuo
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
16
A new technique for hot carrier reliability evaluations of flash memory cell after long-term program/erase cycles
1999
·
S.S. Chung
, Cherng-Ming Yih
, et al.
·
IEEE Transactions on Electron Devices
·
14
N-channel versus p-channel flash EEPROM-which one has better reliabilities
2002
·
S.S. Chung
, S.T. Liaw
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
12
Characterization of hot-hole injection induced SILC and related disturbs in flash memories
2001
·
Cherng-Ming Yih
, Zhi-Hao Ho
, et al.
·
IEEE Transactions on Electron Devices
·
10
A novel high performance and reliability p-type floating gate n-channel flash EEPROM
1999
·
S.S. Chung
, C.M. Yih
, et al.
·
Symposium on VLSI Technology
·
9
New Degradation Mechanisms of Width-Dependent Hot Carrier Effect in Quarter-Micron Shallow-Trench-Isolated p-Channel Metal-Oxide-Semiconductor Field-Effect-Transistors
2001
·
Steve S. Chung
, Shang-Jr Chen
, et al.
·
Japanese Journal of Applied Physics
·
6
New Insight into the Degradation Mechanism of Nitride Spacer with Different Post-Oxide in Submicron LDD n-MOSFET's
1998
·
C. M. Yih
, C. L. Wang
, et al.
·
Japanese Journal of Applied Physics
·
4
A numerical model for simulating MOSFET gate current degradation by considering the interface state generation
2005
·
C.M. Yih
, S.S. Chung
, et al.
·
International Conference on Simulation of Semiconductor Processes and Devices
·
3
A consistent gate and substrate current model for submicron MOSFET's by considering energy transport
2002
·
C.-M. Yih
, G.-H. Lee
, et al.
·
International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
·
2
A Highly Punchthrough-Immune Array Architecture and Program Method for Floating-Gate NOR-Type Nonvolatile Memory
2011
·
Wen-Jer Tsai
, Tien Fan Ou
, et al.
·
IEEE Transactions on Electron Devices
·
1
The dominant mechanisms of hot-hole injection induced SILC and their correlation with disturbs in N-flash memory cells
2003
·
S.S. Chung
, C.M. Yih
, et al.
·
International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
·
1
An accurate hot carrier reliability monitor for deep-submicron shallow S/D junction thin gate oxide n-MOSFETs
2003
·
S.S. Chung
, S.J. Chen
, et al.
·
IEEE International Reliability Physics Symposium proceedings
A New Observation of the Width Dependent Hot Carrier Effect in Shallow-Trench-Isolated P-MOSFETundefineds
1999
·
Steve S. Chung
, W.-J. Yang
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
New Insight into the Degradation Mechanism of Nitride Spacer with Different Post-Oxide in Submicron LDD MOSFETundefineds
1997
·
C. M. Yih
, C. L. Wang
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
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Works count:
17
Citation count:
144
H-index:
8
I10-index:
7
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