2014 · Joel Asubar, Kota Ohi, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 6

A numerical modeling of the frequency dependence of the capacitance–voltage and conductance–voltage characteristics of GaN MIS structures

2022 · K. Nishiguchi, K. Nakata, et al. · Journal of Applied Physics · 5

Surface charging effects on current stability of AlGaN/GaN HEMTs

2014 · Kenya Nishiguchi, Tamotsu Hashizume · IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) · 1

Improved linearity, stability, and thermal performance of multi-mesa-channel AlGaN/GaN HEMTs

2018 · Joel Asubar, Hirokuni Tokuda, et al.

GaN HEMTにおける表面起因の動作不安定性とAl2O3 MOS構造による制御 [論文内容及び審査の要旨]

2018 · 西口, 賢弥 · Institutional Repositories DataBase (IRDB)

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Characterization of ICP-etching induced defects at GaN surfaces using MOS structures

2017 · Tatsuya Oyobiki, Kenya Nishiguchi, et al. · The Japan Society of Applied Physics

Characterization of AlxGa1-xN/GaN MOS-HEMTs

2017 · Yuji Ando, Syouta Kaneki, et al. · The Japan Society of Applied Physics

Interface control process for Al 2 O 3 /GaN structures

2017 · Shota Kaneki, Kenya Nishiguchi, et al. · The Japan Society of Applied Physics

GaN MOS-HEMTの制御性および安定性の向上

2017 · Shota Kaneki, Kenya Nishiguchi, et al. · 応用物理学会春季学術講演会講演予稿集(CD-ROM)

GaNキャップ層がAlGaN/GaN MOS構造のC‐V特性に与える影響

2017 · Kenya Nishiguchi, Shota Kaneki, et al. · 応用物理学会春季学術講演会講演予稿集(CD-ROM)

Controllability improvement of Al2O3-gate structure for GaN transistors

2016 · K. Nishiguchi, J. Ohira, et al. · Compound Semiconductor Week (CSW)

GaNトランジスタのためのAl_2O_3ゲート構造の可制御性の改善【Powered by NICT】

2016 · K Nishiguchi, J Ohira, et al. · IEEE Conference Proceedings

22aBK-8 Feedback cooling of electron-number fluctuation in silicon single-electron devices

2015 · K. Chida, Kenya Nishiguchi, et al. · 日本物理学会講演概要集

Evaluation of Surface charging in AlGaN/GaN HEMTs induced by off-stress bias

2015 · Kenya Nishiguchi · The Japan Society of Applied Physics

Thermal-Noise Suppression in Nanometer-Scale Si Field-Effect Transistors by Feedback Control with Single-Electron Resolution

2014 · K. Chida, K. Nishiguchi, et al. · International Conference on Solid State Devices and Materials (SSDM)

Works count: 36

Citation count: 430

H-index: 7

I10-index: 7