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KrishnanNadar Savithry Nikhil

Observed names: K S Nikhil, K. S. Nikhil, K.S. Nikhil, K. S. Nikhil, Krishnan Nadar Savithry Nikhil, Krishnannadar Savithry Nikhil, Nikhil K S
ORCID: 0000-0001-5559-6794
Observed ORCID: 0000-0001-5559-6794
OpenAlex ID: A5035295749
SOI-LDMOS Transistors With Optimized Partial n+ Buried Layer for Improved Performance in Power Amplifier Applications
2018 · KrishnanNadar Savithry Nikhil, Nandita DasGupta, et al. · IEEE Transactions on Electron Devices · 16
Analysis and Modeling of the Snapback Voltage for Varying Buried Oxide Thickness in SOI-LDMOS Transistors
2016 · KrishnanNadar Savithry Nikhil, Nandita DasGupta, et al. · IEEE Transactions on Electron Devices · 14
An Improved Quasi-Saturation and Charge Model for SOI-LDMOS Transistors
2015 · Nitin Prasad, Prasad Sarangapani, et al. · IEEE Transactions on Electron Devices · 7
Improvement in Breakdown Voltage of Junctionless Power Transistor with Ga2O3 RESURF region
2023 · Manukrishna V. R., K. S. Nikhil · International Conference on Innovative Trends in Information Technology (ICITIIT) · 3
Temperature dependence of linearity parameters of GaN-based junctionless drain extended FinFET
2025 · N. Ashwini, K.S. Nikhil · Microelectronics Journal · 2
Effect of Charge Partitioning on IM3 Prediction in SOI-LDMOS Transistors
2020 · Shubham Gupta, KrishnanNadar Savithry Nikhil, et al. · IEEE Transactions on Electron Devices · 2
Feasibility Study of Conical Channel Nanowire MOSFETs for Improved Performance
2012 · K.S. Nikhil, B. Bindu · Procedia Engineering · 2
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Optimization of the Properties of Functionalized BC 3 Monolayer for Superior Electrode of Solid‐State Sodium‐Ion Batteries
2025 · Keerthana Vudumula, Ashish Kumar Yadav, et al. · Advanced Theory and Simulations · 1
A 0.5–5 Gb/s Wide Range, 160 fJ/Pulse Fully Integrated 13th‐Order CMOS IR‐UWB Transmitter for Wireless Capsule Endoscopy Systems
2025 · Naga Ganesh Akuri, Kunal Kumar, et al. · International Journal of Circuit Theory and Applications · 1
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Analysis of the non-monotonic dependence of FOM of β-Ga2O3 based Junctionless Field Effect Transistor on doping profile linearity in the drift region
2024 · V R Manukrishna, K S Nikhil · International Conference on Devices, Circuits and Systems (ICDCS) · 1
Prediction of IMD behaviour in LDMOS transistor amplifiers using a physics-based large signal compact model
2016 · Shubham Gupta, KrishnanNadar Savithry Nikhil, et al. · IEEE International Conference on Emerging Electronics (ICEE) · 1
Investigation of Analog/RF Performances of JLDEFinFET for Deep Space Applications
2026 · Ashwini Nanjunda, KrishnanNadar Savithry Nikhil · Silicon
Compact Physics-Informed Modeling of β-Ga 2 O 3 Drain-Extended Junctionless FETs and Its Integration in Buck Converter Topology
2025 · V R Manukrishna, K S Nikhil · National Power Electronics Conference (NPEC)
Investigation of Performance Improvement in Drain Extended Longitudinal FinFETs for Thermal-aware Sustainable Electronics Applications
2025 · Ashwini Nanjunda, KrishnanNadar Savithry Nikhil · Silicon
Investigation of breakdown voltage and safe operating area dependence on step gate oxide profile in $$\beta$$-Ga$$_2$$O$$_3$$ junctionless field-effect transistors
2025 · V. R. Manukrishna, K. S. Nikhil · International Journal of Advances in Engineering Sciences and Applied Mathematics
Analysis and Modeling of the Drain Current of β-Ga2O3 Dual-Layer Channel JLFETs Considering the Impact of Doping Concentration and Thickness of NN+ Layers
2025 · V. R. Manukrishna, K. S. Nikhil · Journal of Electronic Materials
Influence of Low-k/High-k Spacer Materials and Field Plate Engineering on the Breakdown Voltage of β-Ga 2 O 3 -Based LDMOSFETs
2025 · V R Manukrishna, K S Nikhil · International Conference on Intelligent Computing and Communication Systems (CICCS)
Impact of Gate Oxide Thickness Variation on the On-state Safe Operating Area and FoM of SOI-Junctionless FinFET considering the Self-heating Effects
2024 · Vinaya S J, K. S. Nikhil · International Conference on Advances in Computing and Communications (ICACC)
Simulation and Modelling of screen oxide thickness dependent implantation peak position in Silicon
2020 · Gajanana R Hegde, Krishnannadar Savithry Nikhil, et al. · IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT)
Works count: 19
Citation count: 50
H-index: 3
I10-index: 2
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