Author

Chang Mo Yoon

Institutions: Tech University of Korea, Hanyang University

Observed institutions: Tech University of Korea, Yonsei University, Hanyang University

ORCID: 0009-0004-7666-6527

Observed ORCID: 0009-0004-7666-6527

OpenAlex ID: A5035299825

Reaction Mechanism of Area-Selective Atomic Layer Deposition for Al2O3 Nanopatterns

2017 · Seunggi Seo, Byung Chul Yeo, et al. · ACS Applied Materials & Interfaces · 105

Low-temperature, high-growth-rate ALD of SiO2 using aminodisilane precursor

2019 · Taewook Nam, Hyunho Lee, et al. · Applied Surface Science · 54

The Impact of an Ultrathin Y2O3Layer on GeO2Passivation in Ge MOS Gate Stacks

2017 · Yujin Seo, Tae In Lee, et al. · IEEE Transactions on Electron Devices · 28

Effects of Ar Addition to O 2 Plasma on Plasma-Enhanced Atomic Layer Deposition of Oxide Thin Films

2018 · Hanearl Jung, Il-Kwon Oh, et al. · ACS Applied Materials & Interfaces · 27

Very high frequency plasma reactant for atomic layer deposition

2016 · Il-Kwon Oh, Gilsang Yoo, et al. · Applied Surface Science · 22

Water-Erasable Memory Device for Security Applications Prepared by the Atomic Layer Deposition of GeO 2

2018 · Chang Mo Yoon, Il-Kwon Oh, et al. · Chemistry of Materials · 21

The impact of atomic layer deposited SiO 2 passivation for high-k Ta 1−x Zr x O on the InP substrate

2015 · Chandreswar Mahata, Il-Kwon Oh, et al. · Journal of Materials Chemistry C · 18

Effect of Al doping on structural and electrical properties of HfO2/ZrO2 layered structures for high-k applications

2024 · Yeon-Ji Jeon, Seung Won Lee, et al. · Journal of Alloys and Compounds · 8

Investigating potential use of TiO2 as conductive-like layer in DRAM capacitors

2025 · Yoonchul Shin, Yeon-Ji Jeon, et al. · Applied Surface Science · 2

Area-selective deposition of mos2 using self-assembled monolayers for high-precision patterning

2025 · Jeong-Hun Choi, Dong Geun Kim, et al. · Materials Letters · 2

Film Properties of Al Thin Films Depending on Process Parameters and Film Thickness Grown by Sputter

2016 · Il-Kwon Oh, Chang Mo Yoon, et al. · Korean Journal of Materials Research · 2

Catalyzed selective atomic layer deposition of SiO2 on amorphous carbon via silicon blocking by alkyltrichlorosilane self-assembled monolayers

2026 · Seo-Hyun Lee, Chang Mo Yoon, et al. · Applied Surface Science · 1

Thermal atomic layer etching of copper via sequential chlorination and volatility-controlled hydration

2026 · Jeongbin Lee, Dongjun Lee, et al. · Materials Horizons · 1

Atomic layer deposition of Ru using a new zero-valent Ru precursor with a ligand system combining open and closed ligands

2025 · Na-Gyeong Kang, Min-Ji Ha, et al. · Journal of Materials Chemistry C · 1

Spatially controlled interfacial engineering by area-selective atomic layer deposition of Nb 2 O 5 for high-performance metal–insulator–metal capacitors

2026 · Yongju Kwon, Jiwoo Oh, et al. · Materials Horizons

Author response for "Atomic Layer Deposition of Ru Using a New Zero-Valent Ru Precursor with a Ligand System Combining Open and Closed Ligands"

2025 · Na-Gyeong Kang, Min-Ji Ha, et al. · Publons reviews and discussion

Works count: 16

Citation count: 292

H-index: 8

I10-index: 7