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Author

Tao Yin

Observed names: Tao YIN, Yin Tao
Institution: Quzhou University
ORCID: 0000-0001-7696-6694
Observed ORCID: 0000-0001-7696-6694
OpenAlex ID: A5035537549
Polishing Characteristics of MnO2 Polishing Slurry on the Si-face of SiC Wafer
2018 · Tao Yin, Tosiro Doi, et al. · International Journal of Precision Engineering and Manufacturing · 39
Fabrication and Application of Gel-Forming CeO2 Fixed Abrasive Tools for Quartz Glass Polishing
2022 · Kaiping Feng, Binghai Lyu, et al. · International Journal of Precision Engineering and Manufacturing · 22
Characteristics in SiC-CMP using MnO 2 slurry with Strong Oxidant under Different Atmospheric Conditions
2013 · Syuhei Kurokawa, Toshiro Doi, et al. · MRS Proceedings · 22
Effect of Using High-Pressure Gas Atmosphere with UV Photocatalysis on the CMP Characteristics of a 4H-SiC Substrate
2021 · Tao Yin, Panpan Zhao, et al. · ECS Journal of Solid State Science and Technology · 20
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The Effects of Strong Oxidizing Slurry and Processing Atmosphere on Double-Sided CMP of SiC Wafer
2012 · Tao Yin, Toshiro Doi, et al. · Advanced materials research · 19
Effects of Atmosphere and Ultraviolet Light Irradiation on Chemical Mechanical Polishing Characteristics of SiC Wafers
2012 · Osamu Ohnishi, Toshiro Doi, et al. · Japanese Journal of Applied Physics · 15
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Effect of Mn-Based Slurries on Chemical Mechanical Polishing of SiC Substrates
2022 · Panpan Zhao, Tao Yin, et al. · ECS Journal of Solid State Science and Technology · 12
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Fabrication of Transparent and Flexible Digital Microfluidics Devices
2022 · Jianchen Cai, Jiaxi Jiang, et al. · Micromachines · 12
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Chemical Mechanical Polishing for Monocrystal SiC Assisted by the Heterogeneous Sono-Fenton Oxidation
2024 · Dong Shi, Tao Yin, et al. · ECS Journal of Solid State Science and Technology · 10
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Characteristic of SiC Slurry in Ultra Precision Lapping of Sapphire Substrates
2021 · Tao Yin, ZhiDa Wang, et al. · International Journal of Precision Engineering and Manufacturing · 8
Effects of Changes in Gas Type and Partial Pressure on Chemical Mechanical Polishing Property of Si Substrate
2019 · Tao Yin, Kei Kitamura, et al. · ECS Journal of Solid State Science and Technology · 4
Polishing Characteristics of Glass Substrate Using New Atmosphere Control Sealed CMP Machine (Bell-jar Shaped CMP Machine)
2012 · Tsutomu YAMAZAKI, Toshiro K. DOI, et al. · Journal of the Japan Society for Precision Engineering · 1
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1009 The Oface and Si-face of SiC wafer CMP Processing Characteristics under Different Atmospheres Using MnO2 Slurry with Strong Oxidant
2013 · Zhe TAN, Syuhei KUROKAWA, et al. · The Proceedings of Conference of Kyushu Branch
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908 Research on SiC Wafer High Speed Processing by using CMP Machine under Controlled Processing Atmosphere : Effect of SiC-CMP Processing in Different Atmosphere and Slurry pH
2012 · Tao YIN, Toshiro DOI, et al. · The Proceedings of Conference of Kyushu Branch
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910 Research of SiC-CMP under high pressure gas atmospheres by using MnCh slurry
2012 · Zhe TAN, Toshiro DOI, et al. · The Proceedings of Conference of Kyushu Branch
911 Application of Byproduct fi'om High Purity SiC Manufacturing Process used as Polishing Slurry : Size classification of SiC particles and polishing characteristics
2012 · Zhida WANG, Toshiro DOI, et al. · The Proceedings of Conference of Kyushu Branch
K21 Sutudy of Single Crystal SiC CMP Using Manganese Slurry : Polishing Under High Pressure Gas Atmospheres
2011 · Tadashi Hasegawa, Toshiro Doi, et al. · The Proceedings of Conference of Kyushu Branch
K35 Development of a High Pressure Chamber Type Double Side CMP Machine : CMP Characteristics of Si and SiC Wafers under Various Processing Atmospheres and Potential of Photocatalyst-assisted CMP
2011 · Kei KITAMURA, Toshiro DOI, et al. · The Proceedings of Conference of Kyushu Branch
K23 High Efficient Processing of SiC Wafer by Atmosphere-Controlled CMP Machine : Processing Property with Colloidal Silica and Diamond Particle Slurry
2011 · Tao YIN, Toshiro DOI, et al. · The Proceedings of Conference of Kyushu Branch
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Works count: 19
Citation count: 184
H-index: 9
I10-index: 9
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