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Dai-Jie Lin

Observed name: D. E. Lin
ORCID: 0009-0000-8175-0759
Observed ORCID: 0009-0000-8175-0759
OpenAlex ID: A5035608709
Investigation of Cavity Enhanced XEOL of a Single ZnO Microrod by Using Multifunctional Hard X-ray Nanoprobe
2019 · Bi-Hsuan Lin, Xiao-Yun Li, et al. · Scientific Reports · 25
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Study of Current Collapse Behaviors of Dual-Gate AlGaN/GaN HEMTs on Si
2021 · Dai-Jie Lin, Jhih-Yuan Yang, et al. · IEEE Journal of the Electron Devices Society · 23
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Deep Source Metal Trenches in GaN-On-Si HEMTs for Relieving Current Collapse
2021 · Ji-Xuan Yang, Dai-Jie Lin, et al. · IEEE Journal of the Electron Devices Society · 13
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Normally-Off AlGaN/GaN HEMTs With a Low Reverse Conduction Turn-On Voltage
2023 · Dai-Jie Lin, Chih-Kang Chang, et al. · IEEE Access · 9
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Emission spectra of hexagonal zinc oxide microrods due to resonant modes
2018 · Yu-Da Chen, Trong Huynh-Buu Ngo, et al. · Journal of the Optical Society of America B · 6
Dependence of Device Characteristics on the Intrinsic Material Properties of High-Performance AlGaN/GaN HEMTs
1999 · B. S. Shelton, M. M. Wong, et al. · physica status solidi (a) · 5
GaN Vertical Transistors with Staircase Channels for High-Voltage Applications
2023 · Kuntal Barman, Dai-Jie Lin, et al. · Materials · 3
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Beyond GHz optical frequency up-converted modulation of LEDs with integrated acousto-optic transducer
2021 · Li-Chan Lai, Dai-Jie Lin, et al. · Optics Letters · 2
Developing the XEOL and TR-XEOL at the X-ray Nanoprobe at Taiwan Photon Source
2018 · Bi-Hsuan Lin, Shao-Chin Tseng, et al. · Microscopy and Microanalysis · 2
Development of High-power High-thermal Conductivity GaN High Electron Mobility Transistors
2019 · Dai-Jie Lin, Yu-Hsuan Lee, et al. · Compound Semiconductor Week (CSW)
Works count: 10
Citation count: 88
H-index: 5
I10-index: 3
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