Author

Hezhou Liu

Observed name: H. Liu

Institution: Shenzhen University

Observed institutions: University of Electronic Science and Technology of China, Shenzhen University

ORCID: 0009-0003-0459-9815

Observed ORCID: 0009-0003-0459-9815

OpenAlex ID: A5035641671

Effects of plasma treatments on Ohmic formation for N polarity of n+-GaN substrates

2025 · Xinke Liu, Kangkai Fan, et al. · Applied Physics Letters · 4

Vertical Al2O3/GaN MOS capacitors with PEALD-GaOx interlayer passivation

2025 · Renqiang Zhu, Jinpei Lin, et al. · Applied Physics Letters · 4

Enhancing Key Performance of Vertical p-NiO/n-GaN Heterojunction Diodes Through Plasma Treatment and Oxygen Post-Annealing

2025 · Yeying Huang, Min Wang, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 2

Vertical p‐Mo x Nb 1‐x S 2 / FS‐n‐GaN Photodetectors for Autonomous Driving, Imaging, and Optical Communication

2026 · Kaifeng Wang, Xue Fan, et al. · Advanced Optical Materials

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High-Responsivity ReMoS 2 Photodetector on Gallium Nitride Patterned Substrate for Visible-Light Image Sensing and Communication Applications

2026 · Bing Jiang, Jun He, et al. · IEEE Transactions on Electron Devices

Thermally stable GaN RF HEMTs on proton irradiated GaN substrates for low-noise applications

2026 · Kangkai Fan, Chengcheng Xu, et al. · Applied Physics Letters

1.4kV/1.61mΩ•cm 2 Vertical p-NiO/n-GaN Heterojunction Diodes with Deep Helium-implanted Edge Termination and Oxygen Plasma Treatment

2026 · Zihao Huang, Huile Zhang, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs

Liyuan Law: GaN fast-charging technology development trend

2025 · Zhixiang Zhong, Kangkai Fan, et al. · Moore and More

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Effects of Proton Irradiation on Vertical GaN Schottky Barrier Diodes

2025 · Kangkai Fan, Xu Luo, et al. · IEEE Transactions on Electron Devices

Enhancing Key Performance of Vertical GaN MOS Capacitors Through GaOx Interface Technology

2025 · Jinpei Lin, Xinyi Pei, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs

P2NG.10 - PbS Colloidal Quantum Dots-Sensitized MoS2 Nanosheets Hybrid Gas Sensors

2018 · J. Liu, B. Zhang, et al. · Proceedings IMCS 2018

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Works count: 11

Citation count: 10

H-index: 2

I10-index: