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Yutaka Shionoiri

Observed names: Y. Shionoiri, 塩野入豊
OpenAlex ID: A5035857609
Evaluation of Off-State Current Characteristics of Transistor Using Oxide Semiconductor Material, Indium–Gallium–Zinc Oxide
2012 · Kiyoshi Kato, Yutaka Shionoiri, et al. · Japanese Journal of Applied Physics · 178
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Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor
2012 · Hiroki Inoue, Takanori Matsuzaki, et al. · IEEE Journal of Solid-State Circuits · 103
(Invited) Success in Measurement the Lowest Off-state Current of Transistor in the World
2011 · Yusuke Sekine, Kazuma Furutani, et al. · ECS Transactions · 54
DRAM Using Crystalline Oxide Semiconductor for Access Transistors and Not Requiring Refresh for More Than Ten Days
2012 · T. Atsumi, S. Nagatsuka, et al. · IEEE International Memory Workshop (IMW) · 39
1Mb Non-Volatile Random Access Memory Using Oxide Semiconductor
2011 · Takanori Matsuzaki, Hiroki Inoue, et al. · IEEE International Memory Workshop (IMW) · 30
UHF RFCPUs on Flexible and Glass Substrates for Secure RFID Systems
2008 · Yoshiyuki Kurokawa, Takayuki Ikeda, et al. · IEEE Journal of Solid-State Circuits · 28
A 3bit/cell nonvolatile memory with crystalline In-Ga-Zn-O TFT
2013 · Shuhei Nagatsuka, Takanori Matsuzaki, et al. · IEEE International Memory Workshop (IMW) · 22
21.2: Full‐Functional System Liquid Crystal Display Using CG‐Silicon Technology
2004 · T. Ikeda, Y. Shionoiri, et al. · SID Symposium Digest of Technical Papers · 22
Scaling to 50-nm C-axis aligned crystalline In-Ga-Zn oxide FET with surrounded channel structure and its application for less-than-5-nsec writing speed memory
2014 · Y. Kobayashi, D. Matsubayashi, et al. · Symposium on VLSI Technology · 20
RFCPUs on glass and plastic substrates fabricated by TFT transfer technology
2006 · H. Dembo, Y. Kurokawa, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 19
43.1: Low‐power Display System Driven by Utilizing Technique Using Crystalline IGZO Transistor
2012 · Tatsuji Nishijima, Seiichi Yoneda, et al. · SID Symposium Digest of Technical Papers · 17
Processor with 4.9-μs break-even time in power gating using crystalline In-Ga-Zn-oxide transistor
2013 · H. Kobayashi, K. Kato, et al. · IEEE Symposium in Low-Power and High-Speed Chips (COOL CHIPS) · 16
Eight-bit CPU with Nonvolatile Registers Capable of Holding Data for 40 Days at 85°C Using Crystalline In-Ga-Zn Oxide Thin Film Transistors
2012 · T. Ohmaru, S. Yoneda, et al. · International Conference on Solid State Devices and Materials (SSDM) · 13
30.2: A 4.5‐in. Full‐Color VGA Poly‐Si TFT‐LCD with Integrated Drivers
1998 · J. Koyama, S. Nakajima, et al. · SID Symposium Digest of Technical Papers · 13
A 32-bit CPU with zero standby power and 1.5-clock sleep/2.5-clock wake-up achieved by utilizing a 180-nm C-axis aligned crystalline In-Ga-Zn oxide transistor
2014 · Atsuo Isobe, Hikaru Tamura, et al. · Symposium on VLSI Circuits · 12
42.3: 4‐in. VGA Reflection‐Type Poly‐Si TFT LCD with Integrated Digital Driver Using Seven‐Mask CG Silicon CMOS Process
2000 · Yoshiharu Hirakata, Masayuki Sakakura, et al. · SID Symposium Digest of Technical Papers · 9
16.9 A 128kb 4b/cell nonvolatile memory with crystalline In-Ga-Zn oxide FET using Vt, cancel write method
2015 · Takanori Matsuzaki, Tatsuya Onuki, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 8
Embedded SRAM and Cortex-M0 core with backup circuits using a 60-nm crystalline oxide semiconductor for power gating
2014 · Hikaru Tamura, Kiyoshi Kato, et al. · IEEE Symposium in Low-Power and High-Speed Chips (COOL CHIPS) · 8
SRAM with c-axis aligned crystalline oxide semiconductor: Power leakage reduction technique for microprocessor caches
2014 · Takahiko Ishizu, Kiyoshi Kato, et al. · IEEE International Memory Workshop (IMW) · 6
State retention flip flop architectures with different tradeoffs using crystalline indium gallium zinc oxide transistors implemented in a 32-bit normally-off microprocessor
2014 · Niclas Sjökvist, Takuro Ohmaru, et al. · Japanese Journal of Applied Physics · 6
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A normally-off microcontroller unit with an 85% power overhead reduction based on crystalline indium gallium zinc oxide field effect transistors
2014 · Kazuaki Ohshima, Hidetomo Kobayashi, et al. · Japanese Journal of Applied Physics · 6
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A 16-level-cell memory with c -axis-aligned a – b -plane-anchored crystal In–Ga–Zn oxide FET using threshold voltage cancel write method
2016 · Takanori Matsuzaki, Tatsuya Onuki, et al. · Japanese Journal of Applied Physics · 4
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Multi-Level Cell Memory with High-Speed, Low-Voltage Writing and High Endurance Using Crystalline In-Ga-Zn Oxide Thin Film Transistor
2012 · T. Ishizu, H. Inoue, et al. · International Conference on Solid State Devices and Materials (SSDM) · 4
UHF RFCPUs on Flexible and Glass Substrates for Secure RFID Systems
2007 · Yoshiyuki Kurokawa, Takayuki Ikeda, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 4
Zero Area Overhead State Retention Flip Flop Utilizing Crystalline In-Ga-Zn Oxide Thin Film Transistor with Simple Power Control Implemented in a 32-bit CPU
2015 · N. Sjokvist, T. Ohmaru, et al. · International Conference on Solid State Devices and Materials (SSDM) · 3
Works count: 34
Citation count: 649
H-index: 13
I10-index: 15
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