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Author

Tim J. Echtermeyer

Observed names: Echtermeyer, T. J., Echtermeyer, TJ, Echtermeyer, Tim J., T J Echtermeyer, T. Echtermeyer, T. J. Echtermeyer, T.J. Echtermeyer, Tim Echtermeyer
Observed institutions: University of Ottawa, University of Cambridge, University of Manchester, AMO (Germany), National Research Council Canada, Joint Attosecond Science Laboratory, RWTH Aachen University
ORCID: 0000-0002-5058-6463
Observed ORCID: 0000-0002-5058-6463
OpenAlex ID: A5036180531
A Graphene Field-Effect Device
2007 · Max C. Lemme, Tim J. Echtermeyer, et al. · IEEE Electron Device Letters · 1,074
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Strong plasmonic enhancement of photovoltage in graphene
2011 · T.J. Echtermeyer, L. Britnell, et al. · Nature Communications · 899
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Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO2
2009 · V. Geringer, M. Liebmann, et al. · Physical Review Letters · 369
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Surface Plasmon Polariton Graphene Photodetectors
2015 · T.J. Echtermeyer, S. Milana, et al. · Nano Letters · 189
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Photothermoelectric and Photoelectric Contributions to Light Detection in Metal–Graphene–Metal Photodetectors
2014 · T. J. Echtermeyer, P. S. Nene, et al. · Nano Letters · 184
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Nonvolatile Switching in Graphene Field-Effect Devices
2008 · T.J. Echtermeyer, M.C. Lemme, et al. · IEEE Electron Device Letters · 168
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Synthesis of Graphene on Silicon Dioxide by a Solid Carbon Source
2009 · Jens Hofrichter, Bartholomäus N. Szafranek, et al. · Nano Letters · 156
Mobility in graphene double gate field effect transistors
2008 · M.C. Lemme, T.J. Echtermeyer, et al. · Solid-State Electronics · 114
Bistability and Oscillatory Motion of Natural Nanomembranes Appearing within Monolayer Graphene on Silicon Dioxide
2010 · T. Mashoff, M. Pratzer, et al. · Nano Letters · 107
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Nonperturbative harmonic generation in graphene from intense midinfrared pulsed light
2017 · M. Taucer, T. J. Hammond, et al. · Physical review. B./Physical review. B · 72
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Graphene field-effect devices
2007 · T. J. Echtermeyer, M. C. Lemme, et al. · The European Physical Journal Special Topics · 54
Towards substrate engineering of graphene–silicon Schottky diode photodetectors
2018 · Hakan Selvi, Nawapong Unsuree, et al. · Nanoscale · 52
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Graphene–silicon-on-insulator (GSOI) Schottky diode photodetectors
2018 · Hakan Selvi, Ernie W. Hill, et al. · Nanoscale · 48
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CMOS integration of epitaxial Gd2O3 high-k gate dielectrics
2006 · H.D.B. Gottlob, T. Echtermeyer, et al. · Solid-State Electronics · 47
0.86-nm CET Gate Stacks With Epitaxial$hboxGd_2hboxO_3$High-$k$Dielectrics and FUSI NiSi Metal Electrodes
2006 · H.D.B. Gottlob, T. Echtermeyer, et al. · IEEE Electron Device Letters · 46
Electron-beam-induced direct etching of graphene
2013 · Cornelius Thiele, Alexandre Felten, et al. · Carbon · 42
A Graphene‐Mica‐Based Photo‐Thermal Actuator for Small‐Scale Soft Robots
2024 · Ming Gu, Tim J. Echtermeyer · Small · 36
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Visible and infrared photocurrent enhancement in a graphene-silicon Schottky photodetector through surface-states and electric field engineering
2019 · N Unsuree, H Selvi, et al. · 2D Materials · 21
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Investigation of MOS capacitors and SOI–MOSFETs with epitaxial gadolinium oxide (Gd2O3) and titanium nitride (TiN) electrodes
2007 · T. Echtermeyer, H.D.B. Gottlob, et al. · Solid-State Electronics · 21
A graphene-based electrochemical switch
2007 · Echtermeyer, T. J., Lemme, M. C., et al. · arXiv (Cornell University) · 16
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Towards Graphene Field Effect Transistors
2007 · Max C. Lemme, Tim Echtermeyer, et al. · ECS Transactions · 16
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Complementary metal oxide semiconductor integration of epitaxial Gd2O3
2009 · M. C. Lemme, H. D. B. Gottlob, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 13
Scalable gate first process for silicon on insulator metal oxide semiconductor field effect transistors with epitaxial high-k dielectrics
2006 · Heinrich D. B. Gottlob, Thomas Mollenhauer, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 12
Leakage Current Mechanisms in Epitaxial Gd[sub 2]O[sub 3] High-k Gate Dielectrics
2008 · H. D. B. Gottlob, T. J. Echtermeyer, et al. · Electrochemical and Solid-State Letters · 9
Gentle FUSI NiSi metal gate process for high-k dielectric screening
2008 · H.D.B. Gottlob, M.C. Lemme, et al. · Microelectronic Engineering · 8
Works count: 41
Citation count: 3,799
H-index: 19
I10-index: 23
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