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Author

Qianyu Cheng

Observed names: Cheng, Qianyu, Qian Yu Cheng
Observed institution: Stony Brook University
ORCID: 0000-0002-2156-9971
Observed ORCID: 0000-0002-2156-9971
OpenAlex ID: A5025832938
Investigation of defect formation at the early stage of PVT-grown 4H-SiC crystals
2023 · Shanshan Hu, Yafei Liu, et al. · Journal of Crystal Growth · 20
Characterization of prismatic slip in PVT-grown AlN crystals
2022 · Shanshan Hu, Haoyan Fang, et al. · Journal of Crystal Growth · 19
Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations
2024 · Qianyu Cheng, Zeyu Chen, et al. · Materials Science in Semiconductor Processing · 16
Characterization of Prismatic Slip in SiC Crystals by Chemical Etching Method
2023 · Shanshan Hu, Shuai Fang, et al. · Materials science forum · 10
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Effective Penetration Depth Investigation for Frank Type Dislocation (Deflected TSDs/TMDs) on Grazing Incidence Synchrotron X-Ray Topographs of 4H-SiC Wafers
2023 · Qian Yu Cheng, Hong Yu Peng, et al. · Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum · 9
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Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Superjunction PIN Diode
2022 · Zeyu Chen, Yafei Liu, et al. · ECS Journal of Solid State Science and Technology · 8
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Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotron X-ray rocking curve topography
2022 · Yafei Liu, Zeyu Chen, et al. · Journal of Crystal Growth · 8
Analysis of strain in ion implanted 4H-SiC by fringes observed in synchrotron X-ray topography
2023 · Zeyu Chen, Yafei Liu, et al. · Journal of Crystal Growth · 7
Ray-Tracing Simulation Analysis of Effective Penetration Depths on Grazing Incidence Synchrotron X-Ray Topographic Images of Basal Plane Dislocations in 4H-SiC Wafers
2022 · Qian Yu Cheng, Hong Yu Peng, et al. · Materials science forum · 7
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Microstructure Analysis of GaN Epitaxial Layers During Ion Implantation Using Synchrotron X-Ray Topography
2021 · Yafei Liu, Hongyu Peng, et al. · ECS Transactions · 7
Characterization of 4H-SiC Lattice Damage After Novel High Energy Ion Implantation
2021 · Zeyu Chen, Yafei Liu, et al. · ECS Transactions · 7
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Analysis of Basal Plane Dislocation Motion Induced by p+ Ion Implantation Using Synchrotron X-Ray Topography
2023 · Ze Yu Chen, Yafei Liu, et al. · Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum · 6
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Investigation of Lattice Strain in High Energy Implanted 4H-SiC Wafers by Al or N Atoms
2022 · Ze Yu Chen, Hong Yu Peng, et al. · Materials science forum · 6
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Synchrotron X-ray topographic characterization of dislocations in 6H-SiC axial samples
2021 · Hongyu Peng, Yafei Liu, et al. · Journal of Crystal Growth · 6
Characterization of Dislocations in 6H-SiC Wafer Through X-Ray Topography and Ray-Tracing Simulations
2021 · Qianyu Cheng, Tuerxun Ailihumaer, et al. · Journal of Electronic Materials · 6
Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth Using Synchrotron X-Ray Topography
2024 · Qian Yu Cheng, Yafei Liu, et al. · Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum · 5
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Analysis of Dislocation Contrast in Synchrotron Grazing-incidence X-ray Topographs and Ray-tracing Simulation in Off-axis 4H-SiC Crystals
2021 · Tuerxun Ailihumaer, Hongyu Peng, et al. · ECS Transactions · 5
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Analysis of Threading Edge Dislocation Low-Angle Grain Boundary Network Distributions in 4H-SiC Wafers Through Synchrotron X-ray Topography and Ray-Tracing Simulation
2025 · Qianyu Cheng, Zeyu Chen, et al. · Journal of Electronic Materials · 4
Prismatic Slip in AlN Crystals Grown By PVT
2021 · Shanshan Hu, Haoyan Fang, et al. · ECS Transactions · 4
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Analysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC Crystals
2024 · Shanshan Hu, Yafei Liu, et al. · Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum · 3
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Basal Plane Dislocation Slip Band Characterization and Epitaxial Propagation in 4H SiC
2023 · Gil Chung, Robert Viveros, et al. · Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum · 2
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Nucleation of Dislocations from Scratches on the Surface of PVT-Grown 4H-SiC Wafers
2025 · Shanshan Hu, Zeyu Chen, et al. · Journal of Electronic Materials · 1
Characterization of Growth Sectors in Gallium Nitride Substrate Wafers
2024 · Yafei Liu, Shanshan Hu, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 1
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Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures
2024 · Ze Yu Chen, Yafei Liu, et al. · Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum · 1
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Investigation of Defect Generation and Propagation in Electrically and Photonically Stressed Silicon Carbide
2023 · Hong Yu Peng, Yafei Liu, et al. · Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum · 1
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Works count: 55
Citation count: 174
H-index: 7
I10-index: 4
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