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Rahmat Hadi Saputro

Highly strained and heavily doped germanium thin films by non-equilibrium high-speed CW laser annealing for optoelectronic applications
2023 · Rahmat Hadi Saputro, Tatsuro Maeda, et al. · Materials Science in Semiconductor Processing · 9
High-operating-temperature short-wave infrared detector featuring Ge 0.93 Sn 0.07 thin film with simple pn junction structures
2025 · Tomo Tanaka, Rahmat Hadi Saputro, et al. · Japanese Journal of Applied Physics · 5
Dopant Redistribution in High-Temperature-Grown Sb-Doped Ge Epitaxial Films
2021 · Rahmat Hadi Saputro, Ryo Matsumura, et al. · Crystal Growth & Design · 5
Enhanced performances of n-type Ge Schottky photodetectors with short-wave infrared transparent conductive oxide electrodes
2025 · Rahmat Hadi Saputro, Tomo Tanaka, et al. · Japanese Journal of Applied Physics · 4
High Doping Activation (≥10 20 cm –3 ) in Tensile-Strained n-Ge Alloys Achieved by High-Speed Continuous-Wave Laser Annealing
2024 · Rahmat Hadi Saputro, Tatsuro Maeda, et al. · ACS Applied Electronic Materials · 4
Extended mid-wave infrared response in Ge-based photodetectors enabled by sputter-grown Ge0.8Sn0.2 epitaxial layers
2026 · Rahmat Hadi Saputro, Tomo Tanaka, et al. · Materials Science in Semiconductor Processing · 1
Cutoff Wavelength Control of GeSn HOT Infrared Detectors by Sn Concentration
2025 · Tomo Tanaka, Hiroyuki Ishii, et al. · International Conference on Solid State Devices and Materials (SSDM) · 1
Impact of Short-Wave Infrared Transparent Conductive Oxide Electrodes on the Responsivity of n-type Ge Schottky Photodetectors
2025 · Rahmat Hadi Saputro, Tomo Tanaka, et al. · International Conference on Solid State Devices and Materials (SSDM) · 1
Crystallization Of Tensile Strained n-Type Ge By Continuous Wave Laser Annealing
2022 · Rahmat Hadi Saputro, Ryo Matsumura, et al. · ECS Meeting Abstracts · 1
Epitaxial Growth of Highly Sb-Doped Ge on p-Ge (100) for Vertical Transistor Applications
2021 · Rahmat Hadi Saputro, Ryo Matsumura, et al. · ECS Meeting Abstracts · 1
Epitaxial Growth of Highly Sb-Doped Ge on p-Ge (100) for Vertical Transistor Applications
2021 · Rahmat Hadi Saputro, Ryo Matsumura, et al. · ECS Transactions · 1
Infrared detection characteristics of p-Ge1−xsnx/n-Ge photodiodes for multispectral sensing
2026 · Taiyo Yajima, Tomo Tanaka, et al. · Infrared Sensors, Devices, and Applications
Broadband Infrared-Transparent and Highly Conductive Ce-Doped Hydrogenated In2O3 Front Electrodes for Infrared Photodetection
2026 · Rahmat Hadi Saputro, Tomo Tanaka, et al. · International Conference on Solid State Devices and Materials (SSDM)
Band-edge-controlled Schottky barriers at ICO:H/Ge interfaces revealed by temperature-dependent C–V analysis
2026 · Tatsuro Maeda, Hiroyuki Ishii, et al. · International Conference on Solid State Devices and Materials (SSDM)
Crystallinity improvement of high Sn-composition Ge0.8Sn0.2 epitaxial layer on Si substrate grown by a sputtering method
2026 · Kousaku Goto, Shigehisa Shibayama, et al. · International Conference on Solid State Devices and Materials (SSDM)
Sn composition and Si-cap passivation effects on infrared detection performance of p-Ge1−xSnx/n-Ge photodiode
2026 · Taiyo Yajima, Tomo Tanaka, et al. · Materials Science in Semiconductor Processing
Electrical Extraction of Phonon Energies and Their Temperature Dependence in Germanium
2026 · Tatsuro Maeda, Rahmat Hadi Saputro, et al. · IEEE Electron Device Letters
Infrared detectivity in p-GeSn/n-Ge junction for multispectral sensing
2026 · Tomo Tanaka, Hiroyuki Ishii, et al. · SPIE Infrared Technology and Applications
Epitaxially Grown GeSn on Ge with Infrared-Transparent Conductive Oxide for Mid-Wave Infrared Photodetectors
2026 · Rahmat Hadi Saputro, Tomo Tanaka, et al. · Conference on Lasers and Electro-Optics
オプトエレクトロニクス応用のための絶縁体上擬似直接遷移型 Ge 系薄膜の成長に関する研究
2025 · Rahmat Hadi Saputro, ラハマト ハディ サプトロ · Institutional Repositories DataBase (IRDB)
Compressive Strain Dependence on the Photoluminescence of Epitaxial Ge 1-xSn x Grown on Ge(100)
2023 · Rahmat Hadi SAPUTRO, Tatsuro Maeda, et al. · International Conference on Solid State Devices and Materials (SSDM)
Optical Property Enhancement through Alloying in High-Speed CWLA-Grown n-type Ge-based MaterialsThe Construction of 4-D FMCW LiDAR Images by Directly Using Self-Heterodyne Beating Signal at Baseband and Linearization of Wavelength Sweeping Lasers
2023 · Rahmat Hadi Saputro, Ryo Matsumura, et al. · International Conference on Solid State Devices and Materials (SSDM)
Realization of Highly-Strained n-type Ge-on-Insulator by CW Laser Annealing
2022 · Rahmat Hadi Saputro, Ryo Matsumura, et al. · International Conference on Solid State Devices and Materials (SSDM)
Crystallization Of Tensile Strained n-Type Ge By Continuous Wave Laser Annealing
2022 · Rahmat Hadi Saputro, Ryo Matsumura, et al. · ECS Transactions
Realization and Characterization of Vertical Ge n + /p Structure Towards Nanowire Transistor Applications
2021 · Rahmat Hadi Saputro, Ryo Matsumura, et al. · The Japan Society of Applied Physics
Works count: 25
Citation count: 33
H-index: 4
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