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David V. Rossi

Observed names: D V. Rossi, D. V. Rossi, D.V. Rossi
OpenAlex ID: A5036690786
Two-dimensional electron gas charged-coupled devices (2DEG-CCD's)
1991 · E.R. Fossum, J.-I. Song, et al. · IEEE Transactions on Electron Devices · 13
A recessed-gap capacitive-gate GaAs CCD
1989 · R.E. Colbeth, J.-I. Song, et al. · IEEE Electron Device Letters · 10
Reduced reverse bias current in Al–GaAs and In0.75Ga0.25As–GaAs junctions containing an interfacial arsenic layer
1987 · D. V. Rossi, E. R. Fossum, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 10
GHz GaAs Ccd's: Promises, Problems And Progress
1989 · R E. Colbeth, D V. Rossi, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 9
A resistive-gate Al/sub 0.3/Ga/sub 0.7/As/GaAs 2DEG CCD with high charge-transfer efficiency at 1 GHz
1991 · J.-I. Song, D.V. Rossi, et al. · IEEE Transactions on Electron Devices · 6
A microwave 2DEG-CCD for high speed signal acquisition
2002 · R.A. LaRue, R.E. Colbeth, et al. · IEEE Gallium Arsenide Integrated Circuit Symposium (GaAs IC) · 4
GaAs CCD readout for engineered bandgap detectors
1990 · John Song, David V. Rossi, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 4
Two-dimensional electron gas charge-coupled devices (2DEG-CCDs)
1991 · R. Fossum, Jong‐In Song, et al. · 3
A resistive-gate In/sub 0.53/Ga/sub 0.47/As/InP heterostructure CCD
1991 · D.V. Rossi, J.-I. Song, et al. · IEEE Electron Device Letters · 2
Two-dimensional electron gas charge-coupled devices
1991 · Eric R. Fossum, John Song, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2
Transport properties and applications of unstrained In0.75Ga0.25As/Al0.6Ga0.4As heterojunctions
1990 · D. V. Rossi, E. R. Fossum, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1
Processing and Substrate Effects on YBaCuO Thin Films Formed by Rapid Thermal Annealing of Cu/BaO/Y2O3 Layered Structures
1990 · Q. Y. Ma, M. T. Schmidt, et al. · Springer eBooks · 1
A 1 GHz GaAs CCD with capacitive gates and high transfer efficiency
2003 · R.E. Colbeth, J.-I. Song, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
Indium Gallium Arsenide Resistive-Gate Charge - Devices
1992 · D.V. Rossi
A Resistive-Gate InAlAs/InGaAs/InP 2DEG CCD
1992 · D.V. Rossi, A. N. Chengl, et al.
Works count: 21
Citation count: 65
H-index: 5
I10-index: 3
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