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D. S. Zolotukhin

Observed names: D S Zolotukhin, D Zolotukhin, D.S. Zolotukhin, Dmitriy S. Zolotukhin, Zolotukhin, Dmitriy, Д.С. Золотухин, Золотухин, Д. С.
ORCID: 0000-0002-1837-3302
Observed ORCID: 0000-0002-1837-3302
OpenAlex ID: A5036942440
Experimental study of structural and optical properties of integrated MOCVD GaAs/Si(001) heterostructures
2017 · P.V. Seredin, A.S. Lenshin, et al. · Physica B Condensed Matter · 36
Impact of the substrate misorientation and its preliminary etching on the structural and optical properties of integrated GaAs/Si MOCVD heterostructures
2017 · P.V. Seredin, A.S. Lenshin, et al. · Physica E Low-dimensional Systems and Nanostructures · 31
Influence of por-Si sublayer on the features of heteroepitaxial growth and physical properties of InxGa1-xN/Si(111) heterostructures with nanocolumn morphology of thin film
2018 · P.V. Seredin, D.L. Goloshchapov, et al. · Physica E Low-dimensional Systems and Nanostructures · 28
Monitoring of elastic stresses with optical system for measuring the substrate curvature in growth of III-N heterostructures by molecular-beam epitaxy
2017 · D. S. Zolotukhin, D. V. Nechaev, et al. · Technical Physics Letters · 10
Control of stress and threading dislocation density in the thick GaN/AlN buffer layers grown on Si (111) substrates by low- temperature MBE
2016 · D Zolotukhin, D Nechaev, et al. · Journal of Physics Conference Series · 7
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Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the Epitaxial Growth of GaN Layers on SiC/por-Si/c-Si Templates
2020 · P. V. Seredin, D. L. Goloshchapov, et al. · Semiconductors · 3
Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures
2020 · P. V. Seredin, D. L. Goloshchapov, et al. · Semiconductors · 3
Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy
2018 · P. V. Seredin, D. L. Goloshchapov, et al. · Semiconductors · 3
Optical and structural properties of the GaAs heterostructures grown using AlGaAs superlattice buffer layer on compliant Si(100) substrates with the preformed porous-Si (por-Si) layer.
2021 · D Zolotukhin, P Seredin, et al. · Journal of Physics Conference Series · 2
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Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of AIIIN/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy
2019 · P. V. Seredin, A. S. Lenshin, et al. · Semiconductors · 2
Electronic and optical properties of hybrid GaN/por-Si(111) heterostructures
2019 · P.V. Seredin, D.L. Goloshchapov, et al. · Quantum Electronics · 2
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Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial InxGa1 – xN/Si(111) Heterostructures
2018 · P. V. Seredin, D. L. Goloshchapov, et al. · Semiconductors · 2
Effect of etching mode on the porosity of layers and photoluminescence in multilayer porous silicon
2024 · Alexandr S. Lenshin, Yaroslav A. Peshkov, et al. · Journal of Optical Technology · 1
Оптические свойства гибридных гетероструктур GaN/SiC/por-Si/Si(111)
2020 · П.В. Середин, Д.Л. Голощапов, et al. · Физика и техника полупроводников · 1
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Исследование влияния переходного слоя нанопористого кремния на атомное и электронное строение, а также оптические свойства гетероструктур A-=SUP=-III-=/SUP=-N/por-Si, выращенных методом плазменно-активированной молекулярно-пучковой эпитаксии
2019 · П.В. Середин, А.С. Леньшин, et al. · Физика и техника полупроводников · 1
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Mode adjustment in hexagonal microresonators with an active region
2016 · D R Kazanov, N Kuznetsova, et al. · Journal of Physics Conference Series · 1
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Characteristics of the growth and composition of AlxGa1-xN/AlN/Si heterostructures with the use of the buffer layer of porous silicon
2022 · A Lenshin, D Zolotukhin, et al. · Journal of Physics Conference Series
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Observation of the influence of complex SiC porous buffer layer on properties of GaN/Si(111) heterostructures
2020 · D Zolotukhin, D Goloshchapov, et al. · Journal of Physics Conference Series
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Влияние слоя нанопористого кремния на практическую реализацию и особенности эпитаксиального роста слоев GaN на темплейтах SiC/por-Si/c-Si
2020 · П.В. Середин, Д.Л. Голощапов, et al. · Физика и техника полупроводников
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Electronic structure and optical characteristics of the hybrid GaN/por-Si heterostructures
2019 · D Zolotukhin, A Lenshin, et al. · Journal of Physics Conference Series
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Structural and morphological characteristics of GaN-based hybrid heterostructures grown on por-Si
2019 · D Zolotukhin, A Lenshin, et al. · Journal of Physics Conference Series
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Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate
2019 · P. V. Seredin, D. L. Goloshchapov, et al. · Semiconductors
Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 –xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology
2019 · P. V. Seredin, D. L. Goloshchapov, et al. · Semiconductors
Структурные и морфологичеcкие свойства гибридных гетероструктур на основе GaN, выращенного на "податливой" подложке por-Si(111)
2019 · П.В. Середин, Д.Л. Голощапов, et al. · Физика и техника полупроводников
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Влияние буферного слоя por-Si на оптические свойства эпитаксиальных гетероструктур In-=SUB=-x-=/SUB=-Ga-=SUB=-1-x-=/SUB=-N/Si(111) с наноколончатой морфологией пленки
2018 · П.В. Середин, Д.Л. Голощапов, et al. · Физика и техника полупроводников
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Works count: 33
Citation count: 136
H-index: 5
I10-index: 4
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