Author

L. Peter Erickson

Observed names: L. P. Erickson, L.P. Erickson, L.Peter Erickson

Observed institutions: University of Minnesota, PerkinElmer (United States)

OpenAlex ID: A5036976312

Material properties of high-quality GaAs epitaxial layers grown on Si substrates

1986 · R. Fischer, H. Morkoç, et al. · Journal of Applied Physics · 273

GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy

1985 · R. Fischer, N. Chand, et al. · Applied Physics Letters · 122

Performance of quarter-micron GaAs metal-semiconductor field-effect transistors on Si substrates

1986 · M. I. Aksun, H. Morkoç, et al. · Applied Physics Letters · 46

Characterization of ohmic contacts to InP

1979 · L.P. Erickson, A. Waseem, et al. · Thin Solid Films · 43

High-quality GaAs MESFET's grown on Silicon substrates by molecular-beam epitaxy

1985 · H. Morkoc, C.K. Peng, et al. · IEEE Electron Device Letters · 41

Growth of Al 0.3 Ga 0.7 As by molecular beam epitaxy in the forbidden temperature range using As 2

1983 · L.P. Erickson, T.J. Mattord, et al. · Electronics Letters · 35

Negative electron affinity gallium arsenide photocathode grown by molecular beam epitaxy

1984 · A. A. Narayanan, D. G. Fisher, et al. · Journal of Applied Physics · 19

Erratum: Enhancement-mode metal/(Al,Ga)As/GaAs buried-interface field-effect transistor (BIFET)

1984 · T.J. Drummond, W. Kopp, et al. · Electronics Letters · 19

Backgating in GaAs/(Al,Ga)As modulation-doped field-effect transistors and its reduction with a superlattice

1984 · D. Arnold, J. Klem, et al. · Applied Physics Letters · 18

Enhancement-mode metal/(Al,Ga)As/GaAs buried-interface field-effect transistor (BIFET)

1983 · T.J. Drummond, W. Kopp, et al. · Electronics Letters · 18

Examination of MBE GaAs/Al0.3Ga0.7As superlattices by Auger electron spectroscopy

1983 · L. Peter Erickson, Bradway F. Phillips · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 16

Summary Abstract: MBE film growth by direct free substrate heating

1985 · L. P. Erickson, G. L. Carpenter, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 15

The observation of oscillations in secondary electron emission during the growth of GaAs by MBE

1987 · L.P. Erickson, M.D. Longerbone, et al. · Journal of Crystal Growth · 13

Large capacity As2 source for molecular beam epitaxy

1984 · T. Henderson, W. Kopp, et al. · Review of Scientific Instruments · 12

Effect of substrate temperature on molecular beam epitaxial GaAs growth using As2

1984 · L. Peter Erickson, Terry J. Mattord, et al. · Journal of Applied Physics · 8

High-efficiency V-band GaAs IMPATT diodes

1984 · Y.E. Ma, E. Benko, et al. · Electronics Letters · 8

Microwave characterization of quarter-micron GaAs metal semiconductor field effect transistors on Si substrates

1986 · M.I. Aksun, H. Morkoc, et al. · Technical digest - International Electron Devices Meeting/Technical digest

IIA-8 GaAs MESFET's and MODFET's on Silicon substrates and Silicon circuits

1985 · R. Fischer, W. Kopp, et al. · IEEE Transactions on Electron Devices

Impact Of Molecular Beam Epitaxy On Millimeter Wave And Optical Systems

1982 · George D. O'Clock, Jr., L.Peter Erickson · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

Heterojunction devices - Doing it with GaAlAs/GaAs

1982 · J. K. Carney, George D. O’Clock, et al. · Microwaves

Near-Millimeter Wave Studies of Sub-Micron Layers of Doped Gallium Arsenide

1981 · G. J. Simonis, T. L. Worchesky, et al. · International Conference on Submillimeter Waves and Their Applications

Impact of Molecular Beam Epitaxy Technology on Spread Spectrum Systems

1981 · George D. O’Clock, L. P. Erickson · UA Campus Repository (The University of Arizona)

Works count: 23

Citation count: 706

H-index: 13

I10-index: 14