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Douglas Andrew Buchanan

Observed names: Buchanan, Douglas A., D A Buchanan, D. A. BUCHANAN, D. A. Buchanan, D. Buchanan, D.A Buchanan, D.A. BUCHANAN, D.A. Buchanan, DOUGLAS A. BUCHANAN, Douglas A Buchanan, Douglas A. Buchanan, Douglas Buchanan
Observed institutions: IBM (United States), Durham University, University of North Dakota, IBM Research - Thomas J. Watson Research Center, University of Minnesota, Duluth, University of Manitoba, Concordia University, University of Windsor
ORCID: 0000-0001-5858-4780
Observed ORCID: 0000-0001-5858-4780
OpenAlex ID: A5037096501
CMOS scaling into the nanometer regime
1997 · Yuan Taur, D.A. Buchanan, et al. · Proceedings of the IEEE · 900
Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
1997 · S.-H. Lo, D.A. Buchanan, et al. · IEEE Electron Device Letters · 814
Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen
1993 · E. Cartier, J. H. Stathis, et al. · Applied Physics Letters · 406
Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues
2001 · E.P Gusev, E Cartier, et al. · Microelectronic Engineering · 390
Scaling the gate dielectric: Materials, integration, and reliability
1999 · D. A. Buchanan · IBM Journal of Research and Development · 368
Hydrogenation over supported gold catalysts
1973 · Geoffrey C. Bond, Paul A. Sermon, et al. · Journal of the Chemical Society Chemical Communications · 272
Anode hole injection and trapping in silicon dioxide
1996 · D. J. DiMaria, E. Cartier, et al. · Journal of Applied Physics · 213
Self-consistent modeling of accumulation layers and tunneling currents through very thin oxides
1996 · Farhan Rana, Sandip Tiwari, et al. · Applied Physics Letters · 208
Volatile and non-volatile memories in silicon with nano-crystal storage
2002 · S. Tiwari, F. Rana, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 200
Ultrathin high-K gate stacks for advanced CMOS devices
2002 · E.P. Gusev, D.A. Buchanan, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 199
Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides
1999 · S.-H. Lo, D. A. Buchanan, et al. · IBM Journal of Research and Development · 198
Interface and bulk trap generation in metal-oxide-semiconductor capacitors
1990 · D. A. Buchanan, D. J. DiMaria · Journal of Applied Physics · 149
Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment
1989 · A. Callegari, P. D. Hoh, et al. · Applied Physics Letters · 127
CMOS scaling into the 21st century: 0.1 µm and beyond
1995 · Y. Taur, Y.-J. Mii, et al. · IBM Journal of Research and Development · 113
Interface states induced by the presence of trapped holes near the silicon–silicon-dioxide interface
1995 · D. J. DiMaria, D. A. Buchanan, et al. · Journal of Applied Physics · 98
Reliability and integration of ultra-thin gate dielectrics for advanced CMOS
1997 · D.A. Buchanan, S.-H. Lo · Microelectronic Engineering · 95
Hot-electron-induced hydrogen redistribution and defect generation in metal-oxide-semiconductor capacitors
1994 · D. A. Buchanan, A. D. Marwick, et al. · Journal of Applied Physics · 90
Coulombic and neutral trapping centers in silicon dioxide
1991 · D. A. Buchanan, M. V. Fischetti, et al. · Physical review. B, Condensed matter · 87
Atomic hydrogen-induced interface degradation of reoxidized-nitrided silicon dioxide on silicon
1994 · E. Cartier, D. A. Buchanan, et al. · Applied Physics Letters · 75
Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates
2001 · Tiezhong Ma, S.A. Campbell, et al. · IEEE Transactions on Electron Devices · 57
Low-temperature deposition of silicon dioxide films from electron cyclotron resonant microwave plasmas
1989 · T. V. Herak, T. T. Chau, et al. · Journal of Applied Physics · 56
Anomalous positive charge formation by atomic hydrogen exposure
1995 · R.E. Stahlbush, E. Cartier, et al. · Microelectronic Engineering · 55
Properties of SiO2/Si/GaAs structures formed by solid phase epitaxy of amorphous Si on GaAs
1991 · A. Callegari, D. K. Sadana, et al. · Applied Physics Letters · 55
80 nm polysilicon gated n-FETs with ultra-thin Al/sub 2/O/sub 3/ gate dielectric for ULSI applications
2002 · D.A. Buchanan, E.P. Gusev, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 50
On the relationship between stress induced leakage currents and catastrophic breakdown in ultra-thin SiO2 based dielectrics
1997 · D.A. Buchanan, J.H. Stathis, et al. · Microelectronic Engineering · 49
Works count: 110
Citation count: 6,397
H-index: 34
I10-index: 63
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