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Hamed Mosalam

High Efficiency and Small Group Delay Variations 0.18-$\mu$ m CMOS UWB Power Amplifier
2018 · Hamed Mosalam, A. Allam, et al. · IEEE Transactions on Circuits & Systems II Express Briefs · 33
22-GHz-Band Oscillator Using Integrated H-Shape Defected Ground Structure Resonator in 0.18- $\mu \text{m}$ CMOS Technology
2018 · Nusrat Jahan, Siti Amalina Enche Ab Rahim, et al. · IEEE Microwave and Wireless Components Letters · 28
A 6.15–10.9 Gb/s 0.58 pJ/Bit Reference-Less Half-Rate Clock and Data Recovery With “Phase Reset” Scheme
2021 · Wenbo Xiao, Qiwei Huang, et al. · IEEE Transactions on Circuits and Systems I Regular Papers · 17
A 54–68 GHz Power Amplifier With Improved Linearity and Efficiency in 40 nm CMOS
2021 · Hamed Mosalam, Wenbo Xiao, et al. · IEEE Transactions on Circuits & Systems II Express Briefs · 16
5.0 to 10.6 GHz 0.18 µm CMOS power amplifier with excellent group delay for UWB applications
2015 · H. Mosalam, A. Allam, et al. · IEEE MTT-S International Microwave Symposium digest · 16
7.5 A 224Gb/s/wire Single-Ended PAM-4 Transceiver Front-End with 29dB Equalization for 800GbE/1.6TbE
2024 · Xiongshi Luo, Xuewei You, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 14
A 19–48.3-GHz 6th-Order Transformer-Based Injection-Locked Frequency Divider With 87.1% Locking Range in 40-nm CMOS
2021 · Junhua Zhu, Qiyao Jiang, et al. · IEEE Transactions on Circuits & Systems II Express Briefs · 14
A 50–82 GHz broadband cascode-based power amplifier in 40 nm CMOS
2021 · Hamed Mosalam, Wenbo Xiao, et al. · AEU - International Journal of Electronics and Communications · 14
K band low power voltage controlled oscillator using 180 nm CMOS technology with a new high quality inductor
2016 · Islam Mansour, H. Mosalam, et al. · IEEE International Conference on Ubiquitous Wireless Broadband · 10
A high efficiency 3–7 GHz class AB CMOS power amplifier for WBAN applications
2015 · A. Gadallah, A. Allam, et al. · IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) · 8
A 57–100 GHz 0.13 μm SiGe power amplifier with high output power and efficiency
2021 · Hamed Mosalam, Quan Pan · Microelectronics Journal · 6
A 12 to 24 GHz high efficiency fully integrated 0.18 µm CMOS power amplifier
2016 · Hamed Mosalam, Ahmed Allam, et al. · IEICE Electronics Express · 4
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High Efficiency, Good phase linearity 0.18 µm CMOS Power Amplifier for MBAN-UWB Applications
2021 · Hamed Mosalam, Ahmed Gadallah · International journal of electrical and computer engineering systems · 3
A 50 - 90 GHz High Efficiency Fully integrated $0.13 \mu \mathrm{m}$ Si Ge Power Amplifier
2019 · Hamed Mosalam, Mohamed Rizk, et al. · 3
A high-efficiency good linearity 21 to 26.5 GHz fully integrated power amplifier using 0.18 μm CMOS technology
2016 · H. Mosalam, A. Allam, et al. · IEEE International Midwest Symposium on Circuits and Systems (MWSCAS) · 2
A 5–9 GHz CMOS Ultra-wideband power amplifier design using load-pull
2013 · H. Mosalam, A. Allam, et al. · IEEE International Conference on Electronics, Circuits and Systems (ICECS) · 1
0.18μm CMOS技術を用いた高効率良好な線形性21~26.5GHz完全集積電力増幅器【Powered by NICT】
2016 · Hamed Mosalam, Abdemegeed Mahmoud Allam, et al. · IEEE Conference Proceedings
A high-efficiency good linearity 21 to 26.5 GHz fully integrated power amplifier using 0.18 .MU.m CMOS technology
2016 · Hamed Mosalam, Ahmed Allam, et al. · IEEE Conference Proceedings
Works count: 18
Citation count: 189
H-index: 9
I10-index: 9
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