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Qing Lin

Neuromorphic sensorimotor loop embodied by monolithically integrated, low-voltage, soft e-skin
2023 · Weichen Wang, Yuanwen Jiang, et al. · Science · 818
Controlled Mechanical Buckling for Origami‐Inspired Construction of 3D Microstructures in Advanced Materials
2016 · Zheng Yan, Fan Zhang, et al. · Advanced Functional Materials · 287
Mechanical assembly of complex, 3D mesostructures from releasable multilayers of advanced materials
2016 · Zheng Yan, Fan Zhang, et al. · Science Advances · 243
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Three-dimensional mesostructures as high-temperature growth templates, electronic cellular scaffolds, and self-propelled microrobots
2017 · Zheng Yan, Mengdi Han, et al. · Proceedings of the National Academy of Sciences · 163
Guided Formation of 3D Helical Mesostructures by Mechanical Buckling: Analytical Modeling and Experimental Validation
2016 · Yuan Liu, Zheng Yan, et al. · Advanced Functional Materials · 99
Sub-0.5 nm Interfacial Dielectric Enables Superior Electrostatics: 65 mV/dec Top-Gated Carbon Nanotube FETs at 15 nm Gate Length
2020 · G. Pitner, Z. Zhang, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 35
Band-to-Band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors
2023 · Qing Lin, Carlo Gilardi, et al. · ACS Nano · 24
3D Scaffolds: Deterministic Integration of Biological and Soft Materials onto 3D Microscale Cellular Frameworks (Adv. Biosys. 9/2017)
2017 · Joselle M. McCracken, Sheng Xu, et al. · Advanced Biosystems · 23
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Bandgap Extraction at 10 K to Enable Leakage Control in Carbon Nanotube MOSFETs
2022 · Qing Lin, Gregory Pitner, et al. · IEEE Electron Device Letters · 20
High-performance and low parasitic capacitance CNT MOSFET: 1.2 mA/μm at VDS of 0.75 V by self-aligned doping in sub-20 nm spacer
2023 · Shengman Li, Tzu-Ang Chao, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 19
Building high performance transistors on carbon nanotube channel
2023 · Gregory Pitner, Nathaniel Safron, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 18
Enhancement-Mode Atomic Layer Deposited W-Doped In2O3 Transistor at 55 nm Channel Length by Oxide Capping Layer with Improved Stability
2024 · Qing Lin, Nathaniel Safron, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 16
Extended Scale Length Theory Targeting Low-Dimensional FETs for Carbon Nanotube FET Digital Logic Design-Technology Co-optimization
2021 · C. Gilardi, B. Chehab, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 16
Hybrid 2T nMOS/pMOS Gain Cell Memory With Indium-Tin-Oxide and Carbon Nanotube MOSFETs for Counteracting Capacitive Coupling
2023 · Shuhan Liu, Shengman Li, et al. · IEEE Electron Device Letters · 12
N3XT 3D Technology Foundations and Their Lab-to-Fab: Omni 3D Logic, Logic+Memory Ultra-Dense 3D, 3D Thermal Scaffolding
2023 · T. Srimani, A. Bechdolt, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 11
Measurement of Ferroelectric Properties of Nanometer Scaled Individual Metal/Hf0.5Zr0.5O2/Metal Capacitors
2021 · Fei Huang, Matthias Passlack, et al. · IEEE Electron Device Letters · 11
Application-driven synthesis and characterization of hexagonal boron nitride deposited on metals and carbon nanotubes
2021 · Victoria Chen, Yong Cheol Shin, et al. · 2D Materials · 10
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Barrier Booster for Remote Extension Doping and its DTCO for 1D & 2D FETs
2023 · Carlo Gilardi, Gilad Zeevi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 8
Orthogonal $\mathbf{V}_{\mathbf{T}}$ Tuning for Oxide Semiconductor 2T Gain Cell Enabled by Interface Dipole Engineering
2025 · F. F. Athena, J. Kang, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 7
4 Bits/cell Hybrid 1F1R for High Density Embedded Non-Volatile Memory and its Application for Compute in Memory
2022 · W.-C. Chen, F. Huang, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 7
Controlled Mechanical Buckling for Origami‐Inspired Construction of 3D Microstructures in Advanced Materials
2017 · Zheng Yan, Fan Zhang, et al. · Advanced Functional Materials · 6
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Switching limits of top-gated carbon nanotube field-effect transistors
2023 · A. Sanchez-Soares, C. Gilardi, et al. · Solid-State Electronics · 4
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Multi- V T in Oxide--Semiconductor Transistors Leveraging Sub-1-nm Dipoles for Low-Refresh Energy Gain Cell Memory
2025 · Fabia Farlin Athena, Jimin Kang, et al. · IEEE Transactions on Electron Devices · 1
Electrically driven light emission from single quantum dots using pulsed MOS capacitors
2023 · Vivian Wang, Qing Lin, et al. · Applied Physics Letters · 1
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3D Assembly: Controlled Mechanical Buckling for Origami‐Inspired Construction of 3D Microstructures in Advanced Materials (Adv. Funct. Mater. 16/2016)
2016 · Zheng Yan, Fan Zhang, et al. · Advanced Functional Materials · 1
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Works count: 29
Citation count: 1,860
H-index: 13
I10-index: 17
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