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Author

Zequan Chen

Observed name: Chen, Zequan
ORCID: 0000-0003-3668-1912
Observed ORCID: 0000-0003-3668-1912
OpenAlex ID: A5038364584
Insights Into the Behavior of Leakage Current and Switching Instability in Lateral β-Ga₂O₃ MOSFETs
2024 · Zequan Chen, Matthew Smith, et al. · IEEE Transactions on Electron Devices · 7
Charge Transport in GaN High Electron Mobility Transistor With Positive Substrate Bias
2025 · Peng Huang, Matthew D. Smith, et al. · IEEE Transactions on Electron Devices · 5
Time-dependent conduction mechanisms in reversed stepped superlattice layers of GaN HEMTs on 200 mm engineered substrates
2024 · Zequan Chen, Michael J. Uren, et al. · Applied Physics Letters · 3
GaN Digital IC Operating Up to 800 °C Temperature
2026 · Yixin Xiong, Ajay K. Visvkarma, et al. · IEEE Transactions on Electron Devices · 2
Modelling of impedance dispersion in lateral β-Ga2O3 MOSFETs due to parallel conductive Si-accumulation layer
2023 · Zequan Chen, Abhishek Mishra, et al. · Applied Physics Express · 2
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Study of leakage current in GaN junction field-effect transistor under heavy ion radiation
2026 · Jianan Song, Zequan Chen, et al. · Applied Physics Letters · 1
Extraction of Sub-Threshold Mobility in Ga2O3 Lateral Transistors From AC Conductance
2023 · Abhishek Mishra, Michael J. Uren, et al. · IEEE Electron Device Letters · 1
Thermal Characterization of 650 V GaN HEMTs on 200 mm Engineered Substrates
2026 · Zequan Chen, James W. Pomeroy, et al. · IEEE Electron Device Letters
Opportunities for Wide and Ultrawide Bandgap Devices with Heterogenous Integration
2025 · Vanjari Sai Charan, Aditya K. Bhat, et al. · IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
Works count: 10
Citation count: 21
H-index: 3
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