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Bruna Cardoso Paz

Observed names: B C Paz, B. C. Paz, B. Cardoso Paz, B. Paz, B.C. Paz, Bruna Cardoso-Paz, Cardoso Paz, Bruna, Cardoso-Paz, Bruna, Paz, B. C., Paz, B. Cardoso, Paz, Bruna Cardoso
Observed institutions: Institut polytechnique de Grenoble, Centre National de la Recherche Scientifique, Centro Universitário FEI, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, STMicroelectronics (France), Institut Néel, Laboratoire d'Électronique des Technologies de l'Information, Université Grenoble Alpes
ORCID: 0000-0002-8336-3178
Observed ORCID: 0000-0002-8336-3178
OpenAlex ID: A5038371545
Variability Evaluation of 28nm FD-SOI Technology at Cryogenic Temperatures down to 100mK for Quantum Computing
2020 · B. Cardoso Paz, L. Le Guevel, et al. · Symposium on VLSI Technology · 71
Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications
2020 · Bruna Cardoso Paz, Mikael Casse, et al. · IEEE Transactions on Electron Devices · 70
Charge-based compact analytical model for triple-gate junctionless nanowire transistors
2016 · F. Ávila-Herrera, B.C. Paz, et al. · Solid-State Electronics · 40
Low-power transimpedance amplifier for cryogenic integration with quantum devices
2020 · L. Le Guevel, G. Billiot, et al. · Applied Physics Reviews · 35
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Parity and Singlet-Triplet High-Fidelity Readout in a Silicon Double Quantum Dot at 0.5 K
2022 · David J. Niegemann, Victor El-Homsy, et al. · PRX Quantum · 33
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Front and back channels coupling and transport on 28 nm FD-SOI MOSFETs down to liquid-He temperature
2021 · Bruna Cardoso Paz, Mikaël Cassé, et al. · Solid-State Electronics · 32
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Double-gate junctionless transistor model including short-channel effects
2015 · B C Paz, F Ávila-Herrera, et al. · Semiconductor Science and Technology · 28
Electrical manipulation of a single electron spin in CMOS using a micromagnet and spin-valley coupling
2023 · Bernhard Klemt, Victor Elhomsy, et al. · npj Quantum Information · 27
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Probing Low-Frequency Charge Noise in Few-Electron CMOS Quantum Dots
2023 · Cameron Spence, Bruna Cardoso Paz, et al. · Physical Review Applied · 26
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A new FDSOI spin qubit platform with 40nm effective control pitch
2021 · T. Bedecarrats, B. Cardoso Paz, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 26
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Lambert-W function-based parameter extraction for FDSOI MOSFETs down to deep cryogenic temperatures
2021 · F. Serra di Santa Maria, L. Contamin, et al. · Solid-State Electronics · 25
Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K
2020 · Mikaël Cassé, Bruna Cardoso Paz, et al. · Applied Physics Letters · 21
Drain current model for short-channel triple gate junctionless nanowire transistors
2016 · B.C. Paz, M. Cassé, et al. · Microelectronics Reliability · 20
Compact model for short-channel symmetric double-gate junctionless transistors
2015 · F. Ávila-Herrera, A. Cerdeira, et al. · Solid-State Electronics · 19
Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance
2020 · M. Casse, B. Cardoso Paz, et al. · IEEE Transactions on Electron Devices · 18
Integrated Variability Measurements of 28 nm FDSOI MOSFETs down to 4.2 K for Cryogenic CMOS Applications
2020 · Bruna Cardoso Paz, Loick Le Guevel, et al. · IEEE International Conference on Microelectronic Test Structures (ICMTS) · 16
Cryogenic operation of Ω-gate p-type SiGe-on-insulator nanowire MOSFETs
2018 · Bruna Cardoso Paz, Marcelo Antonio Pavanello, et al. · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon · 16
Experimental Analysis and Modeling of Self-Heating and Thermal Coupling in 28 nm FD-SOI CMOS Transistors Down to Cryogenic Temperatures
2024 · Flávio Enrico Bergamaschi, Tadeu Mota Frutuoso, et al. · IEEE Transactions on Electron Devices · 15
FDSOI for cryoCMOS electronics: device characterization towards compact model
2022 · M. Casse, B. Cardoso Paz, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 15
Spin-Valley Coupling Anisotropy and Noise in CMOS Quantum Dots
2022 · Cameron Spence, Bruna Cardoso Paz, et al. · Physical Review Applied · 14
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Study of silicon n- and p-FET SOI nanowires concerning analog performance down to 100K
2016 · Bruna Cardoso Paz, Mikaël Cassé, et al. · Solid-State Electronics · 14
Challenges and perspectives in the modeling of spin qubits
2020 · Y. M. Niquet, L. Hutin, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 11
Non-linearity analysis of triple gate SOI nanowires MOSFETS
2016 · Bruna Cardoso Paz, Rodrigo Trevisoli Doria, et al. · Symposium on Microelectronics Technology and Devices · 10
Analog performance of n- and p-FET SOI nanowires including channel length and temperature influence
2016 · Bruna Cardoso Paz, Marcelo Antonio Pavanello, et al. · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon · 8
Role of the extensions in Double-Gate Junctionless MOSFETs in the drain current at high gate voltage
2015 · Antonio Cerdeira, Fernando Avila Herrera, et al. · Symposium on Microelectronics Technology and Devices · 8
Works count: 82
Citation count: 757
H-index: 16
I10-index: 23
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