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Boutaleb Labdelli
Observed names:
B. Labdelli,
Boutaleb LABDELLI,
L Boutaleb
Institution:
Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique
Observed institutions:
Université Djilali de Sidi Bel Abbès,
Centre de Recherche en Technologie des Semi-conducteurs pour l’Energétique
OpenAlex ID:
A5038686507
First-principles prediction of the structural and electronic properties of zinc blende GaNxAs1−x alloys
2013
·
Mohamed Issam Ziane
, Zouaoui Bensaad
, et al.
·
Materials Science in Semiconductor Processing
·
21
Properties of Undoped and (Al, In) Doped ZnO Thin Films Prepared by Ultrasonic Spray Pyrolysis for Solar Cell Applications
2018
·
A. Djelloul
, Y. Larbah
, et al.
·
Journal of Nano- and Electronic Physics
·
15
Co-Diffusion Processing of p+/n/n+ Structure for n-Type Silicon Solar Cells Using Boron Doped Paper Sheets
2020
·
A. El Amrani
, A. Boucheham
, et al.
·
Silicon
·
8
Investigation of pre-deposition temperature effect on n+-BSF properties in co-diffusion process
2018
·
A El Amrani
, L Boutaleb
, et al.
·
Materials Research Express
·
6
Influence of Wafer Thickness and Screen-Printing Mesh Counts on the Al-BSF in Crystalline Silicon Solar Cells
2023
·
B. Labdelli
, A. Djelloul
, et al.
·
Journal of Nano- and Electronic Physics
·
3
PDF
Influence of Pre-deposition Temperature of Phosphorous Silicate Glass layers on the Formation of n+/n Junctions
2025
·
A. Djelloul
, A. Boucheham
, et al.
·
Semiconductors
·
1
Effect of SiNx/SiO2 Passivation Layers on Diffused Front Surface Field in n-type Silicon Wafers
2025
·
B. Labdelli
, A. Boucheham
, et al.
·
Journal of Nano- and Electronic Physics
·
1
PDF
First Principles Prediction of Structural, Electronic and Optical Properties of Zinc Blende InxGa1–xP Alloys
2016
·
Boutaleb Labdelli
, Halima Mazari
, et al.
·
Journal of Nanoelectronics and Optoelectronics
·
1
Effect of thermal oxide layers on the front surface field characteristics of n-type silicon solar cells
2026
·
Boutaleb Labdelli
, Abdelghani Boucheham
, et al.
·
Main Group Chemistry
Recherche de nouveaux matériaux semi-conducteurs ternaires basés sur les III-V tel que l’InxGa1-xP pour des applications en électronique et en conversion photovoltaïque
2019
·
Boutaleb Labdelli
, Encadreur Mansour Mazari.H
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Works count:
12
Citation count:
56
H-index:
4
I10-index:
2
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