Author

K. Hammoudi

Observed name: K Hammoudi

Institution: University of Sciences and Technology Houari Boumediene

Observed institution: University of Sciences and Technology Houari Boumediene

ORCID: 0000-0001-9000-2955

Observed ORCID: 0000-0001-9000-2955

OpenAlex ID: A5038982681

Numerical simulation and validity of the surface photovoltage method in amorphous silicon with a Schottky contact

2018 · K Hammoudi, S Tata, et al. · Semiconductor Science and Technology · 1

The Numerical Simulation of the Constant Photocurrent Method (cpm) in Hydrogenated Amorphous Silicon

2009 · K. Hammoudi, Abdelkrim Fedala, et al. · The African review of physics

Works count: 2

Citation count: 1

H-index: 1

I10-index: