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Negin Moezi

Observed names: N Moezi, N. Moezi
ORCID: 0000-0003-1020-1722
Observed ORCID: 0000-0003-1020-1722
OpenAlex ID: A5039333822
Benchmarking statistical compact modeling strategies for capturing device intrinsic parameter fluctuations in BSIM4 and PSP
2010 · Binjie Cheng, Daryoosh Dideban, et al. · IEEE Design & Test of Computers · 73
A Novel Integrated SET Based Inverter for Nano Power Electronic Applications
2008 · Negin Moezi, Daryoosh Dideban, et al. · American Journal of Engineering and Applied Sciences · 38
A novel graphene tunnelling field effect transistor (GTFET) using bandgap engineering
2016 · Mojtaba Saeidi Mobarakeh, Negin Moezi, et al. · Superlattices and Microstructures · 37
Germanene nanoribbon tunneling field effect transistor (GeNR-TFET) with a 10 nm channel length: analog performance, doping and temperature effects
2016 · Amir Hossein Bayani, Daryoosh Dideban, et al. · Semiconductor Science and Technology · 33
Silicene field effect transistor with high on/off current ratio and good current saturation
2015 · Mehran Vali, Daryoosh Dideban, et al. · Journal of Computational Electronics · 26
Investigation of sub-10nm cylindrical surrounding gate germanium nanowire field effect transistor with different cross-section areas
2017 · Amir Hossein Bayani, Daryoosh Dideban, et al. · Superlattices and Microstructures · 20
Modeling and simulation of transistor and circuit variability and reliability
2010 · A. Asenov, B. Chen, et al. · Custom Integrated Circuits Conference · 19
Impact of uniaxial compressive strain on physical and electronic parameters of a 10 nm germanene nanoribbon field effect transistor
2016 · Amir Hossein Bayani, Daryoosh Dideban, et al. · Superlattices and Microstructures · 18
Hydrogen sensitive field-effect transistor based on germanene nanoribbon and optical properties of hydrogenated germanene
2016 · Amir Hossein Bayani, Daryoosh Dideban, et al. · Journal of Computational Electronics · 18
A Half Adder Design Based on Ternary Multiplexers in Carbon Nano-Tube Field Effect Transistor (CNFET) Technology
2020 · Elham Nikbakht, Daryoosh Dideban, et al. · ECS Journal of Solid State Science and Technology · 17
Benchmarking Performance of a Gate-All-Around Germanium Nanotube Field Effect Transistor (GAA-GeNTFET) against GAA-CNTFET
2017 · Amir Hossein Bayani, Daryoosh Dideban, et al. · ECS Journal of Solid State Science and Technology · 15
A scheme for a topological insulator field effect transistor
2015 · Mehran Vali, Daryoosh Dideban, et al. · Physica E Low-dimensional Systems and Nanostructures · 15
Quantum well resonant tunneling FET based on topological insulator
2016 · Mehran Vali, Daryoosh Dideban, et al. · Superlattices and Microstructures · 12
Drain Current Collapse in Nanoscaled Bulk MOSFETs Due to Random Dopant Compensation in the Source/Drain Extensions
2011 · Stanislav Markov, Xingsheng Wang, et al. · IEEE Transactions on Electron Devices · 11
A novel approach to the statistical generation of non-normal distributed PSP compact model parameters using a nonlinear power method
2010 · U. Kovac, D. Dideban, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 11
Impact of statistical parameter set selection on the statistical compact model accuracy: BSIM4 and PSP case study
2011 · Negin Moezi, Daryoosh Dideban, et al. · Microelectronics Journal · 10
Improvement of Tunnel Field Effect Transistor Performance Using Auxiliary Gate and Retrograde Doping in the Channel
2018 · M. Karbalaei, D. Dideban, et al. · DOAJ (DOAJ: Directory of Open Access Journals) · 6
Capturing intrinsic parameter fluctuations using the PSP compact model
2010 · B Cheng, D Dideban, et al. · Design, Automation, and Test in Europe · 6
Benchmarking the Accuracy of PCA Generated Statistical Compact Model Parameters Against Physical Device Simulation and Directly Extracted Statistical Parameters
2009 · B. Cheng, N. Moezi, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 6
Improvement of a Nano-scale Silicon on Insulator Field Effect Transistor Performance using Electrode, Doping and Buried Oxide Engineering
2020 · Mohammad Karbalaei, Daryoosh Dideban, et al. · ENLIGHTEN (Jurnal Bimbingan dan Konseling Islam) · 4
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A Scheme of Quantum Tunnel Field Effect Transistor Based on Armchair Graphene Nano-Ribbon
2021 · Mehran Vali, Negin Moezi, et al. · ECS Journal of Solid State Science and Technology · 3
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Statistical compact model strategies for nano CMOS transistors subject of atomic scale variability
2012 · Negin Moezi · Enlighten: Theses (The University of Glasgow) · 3
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Predictive physics based simulation of nano scale gate-all-around field effect transistor under the influence of high-k gate dielectrics
2020 · Negin Moezi, Mohammad Karbalaei · Journal of Nanostructures · 2
Boron Nitride-Graphene (BN-G) Bilayer as a Channel of Graphene Based Field Effect Transistor
2023 · Mehran Vali, Negin Moezi, et al. · ECS Journal of Solid State Science and Technology · 1
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Capturing intrinsic parameter fluctuations using the PSP compact model
2010 · B. Cheng, Daryoosh Dideban, et al. · Design, Automation, and Test in Europe · 1
Works count: 33
Citation count: 406
H-index: 12
I10-index: 16
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