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V. P. Evtikhiev

Observed names: Evtikhiev V. P., Evtikhiev, V. P., Evtikhiev, Vadim, Evtikhiev, Vadim P., V P Evtikhiev, V. Evtikhiev, V. P Evtikhiev, V. P. EVTIKHIEV, V.P Evtikhiev, V.P. Evtikhiev, Vadim Evtikhiev, Vadim P. Evtikhiev, В.П. Евтихиев
Observed institutions: Russian Academy of Sciences, Saint Petersburg Academic University, ITMO University, Lund University, Heriot-Watt University, University of Sheffield, Ioffe Institute
ORCID: 0000-0002-5608-2725
Observed ORCID: 0000-0002-5608-2725
OpenAlex ID: A5039607029
Spin-relaxation anisotropy in asymmetrical (001) AlxGa1−xAs quantum wells from Hanle-effect measurements: Relative strengths of Rashba and Dresselhaus spin-orbit coupling
2006 · N. S. Averkiev, L. E. Golub, et al. · Physical Review B · 98
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Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates
2003 · L. Ya. Karachinsky, S. Pellegrini, et al. · Applied Physics Letters · 46
Optical reflection and contactless electroreflection from GaAlAs layers with periodically arranged GaAs quantum wells
2006 · V. V. Chaldyshev, A. S. Shkol’nik, et al. · Semiconductors · 22
Control of density, size and size uniformity of MBE-grown InAs quantum dots by means of substrate misorientation
2002 · V P Evtikhiev, A M Boiko, et al. · Semiconductor Science and Technology · 22
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Correlation spectroscopy of excitons and biexcitons on a single quantum dot
2002 · Valéry Zwiller, Per Jonsson, et al. · Physical Review A · 21
Voltage distributions and nonoptical catastrophic mirror degradation in high power InGaAs/AlGaAs/GaAs lasers studied by Kelvin probe force microscopy
2002 · A. V. Ankudinov, V. P. Evtikhiev, et al. · Journal of Applied Physics · 19
Nanorelief of an oxidized cleaved surface of a grid of alternating Ga0.7Al0.3As and GaAs heterolayers
1999 · A. V. Ankudinov, V. P. Evtikhiev, et al. · Semiconductors · 18
Observations of self-organized InAs nanoislands on GaAs (0 0 1) surface by electrostatic force microscopy
2002 · P. Girard, A.N. Titkov, et al. · Applied Surface Science · 16
Observation of the biexponential ground-state decay time behavior in InAs self-assembled quantum dots grown on misoriented substrates
2005 · A. S. Shkolnik, L. Ya. Karachinsky, et al. · Applied Physics Letters · 15
Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy
2018 · Galia Pozina, Azat R. Gubaydullin, et al. · Scientific Reports · 13
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Characteristics of the InAs quantum dots MBE grown on the vicinal GaAs(001) surfaces misoriented to the [010] direction
1999 · V.P. Evtikhiev, V.E. Tokranov, et al. · Journal of Crystal Growth · 13
Kelvin probe force and surface photovoltage microscopy observation of minority holes leaked from active region of working InGaAs∕AlGaAs∕GaAs laser diode
2007 · A. V. Ankudinov, V. P. Evtikhiev, et al. · Journal of Applied Physics · 12
Spectroscopic studies of random telegraph noise in InAs quantum dots in GaAs
2002 · N. Panev, M.-E. Pistol, et al. · Journal of Applied Physics · 12
Growth of InAs quantum dots on vicinal GaAs(001) surfaces misoriented in the [010] direction
1998 · V. P. Evtikhiev, V. E. Tokranov, et al. · Semiconductors · 12
Fabrication and optical properties of porous InP structures
2012 · A.V. Atrashchenko, V.N. Katz, et al. · Physica E Low-dimensional Systems and Nanostructures · 11
On the accuracy of quantitative measurements of the local surface potential
2010 · K. S. Ladutenko, A. V. Ankudinov, et al. · Technical Physics Letters · 11
Modulation optical spectroscopy of excitons in structures with GaAs multiple quantum wells separated by tunneling-nontransparent barriers
2007 · V. V. Chaldyshev, A. S. Shkol’nik, et al. · Semiconductors · 11
Temperature dependence of the threshold current of QW lasers
2005 · N. L. Bazhenov, K. D. Mynbaev, et al. · Semiconductors · 11
Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(bd001) surfaces misoriented in the [010] direction in the active region
1998 · V. P. Evtikhiev, I. V. Kudryashov, et al. · Semiconductors · 11
Quantum-Cascade Lasers with a Distributed Bragg Reflector Formed by Ion-Beam Etching
2020 · A. V. Babichev, D. A. Pashnev, et al. · Technical Physics Letters · 10
Kelvin probe force microscopy of hole leakage from the active region of a working injection-type semiconductor laser diode
2006 · A. V. Ankudinov, V. P. Evtikhiev, et al. · Semiconductors · 10
Effect of GaAs(001) surface misorientation on the emission from MBE grown InAs quantum dots
1999 · I.V Kudryashov, V.P Evtikhiev, et al. · Journal of Crystal Growth · 10
Emission Properties of GaN Planar Hexagonal Microcavities
2019 · Galia Pozina, Carl Hemmingsson, et al. · physica status solidi (a) · 9
Optical Cavity Based on GaN Planar Nanowires Grown by Selective Area Metal‐Organic Vapor Phase Epitaxy
2019 · Galia Pozina, Konstantin A. Ivanov, et al. · physica status solidi (b) · 9
Surface Emitting Quantum-Cascade Ring Laser
2021 · A. V. Babichev, E. S. Kolodeznyi, et al. · Semiconductors · 7
Works count: 130
Citation count: 633
H-index: 12
I10-index: 22
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