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Hiromi Sawai

Observed name: H. Sawai
ORCID: 0000-0003-3981-4071
Observed ORCID: 0000-0003-3981-4071
OpenAlex ID: A5039754234
High thermal tolerance of 25-nm c-axis aligned crystalline In-Ga-Zn oxide FET
2018 · Hitoshi Kunitake, Kazuaki Ohshima, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 45
A ${c}$ -Axis-Aligned Crystalline In-Ga-Zn Oxide FET With a Gate Length of 21 nm Suitable for Memory Applications
2019 · Hitoshi Kunitake, Ryo Arasawa, et al. · IEEE Journal of the Electron Devices Society · 43
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High-performance single-crystalline In2O3 field effect transistor toward three-dimensional large-scale integration circuits
2024 · Shunpei Yamazaki, Fumito Isaka, et al. · Communications Materials · 29
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1-Mbit 3-D DRAM Using a Monolithically Stacked Structure of a Si CMOS and Heterogeneous IGZO FETs
2024 · Takeya Hirose, Yuki Okamoto, et al. · IEEE Journal of the Electron Devices Society · 13
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1Mbit 1T1C 3D DRAM with Monolithically Stacked One Planar FET and Two Vertical FET Heterogeneous Oxide Semiconductor layers over Si CMOS
2023 · Y. Okamoto, Y. Komura, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 13
A Physically Based Compact Model for IGZO Transistors
2021 · Rafael Rios, Daniel Morris, et al. · IEEE Transactions on Electron Devices · 9
32‐1: Oxide Semiconductor Field‐Effect Transistor for High‐Resolution Displays Capable of Deep Black Display
2022 · Yutaka Okazaki, Hiromi Sawai, et al. · SID Symposium Digest of Technical Papers · 7
Development of n+-in-p planar pixel sensors for extremely high radiation environments, designed to retain high efficiency after irradiation
2016 · Y. Unno, S. Kamada, et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 7
Heterogeneous Oxide Semiconductor FETs Comprising Planar FET and Vertical Channel FETs Monolithically Stacked on Si CMOS, Enabling 1-Mbit 3D DRAM
2024 · Hiroki Inoue, Takeya Hirose, et al. · IEEE International Memory Workshop (IMW) · 6
Vertical-Channel Oxide Semiconductor FET with Off-State Leakage Current of 4.6 zA/μm
2023 · Masashi Oota, Toshiki Hamada, et al. · International Conference on Solid State Devices and Materials (SSDM) · 4
Demonstration of scaling and monolithic stacking for higher integration of integrated circuit using c-axis aligned crystalline oxide semiconductor FET
2024 · Hiromi Sawai, Motomu Kurata, et al. · Japanese Journal of Applied Physics · 3
Improved C-axis-aligned Crystalline Oxide Semiconductor FET Suitable for Scaling and Monolithic Stacking for Higher Integration of Integrated Circuit
2023 · Hiromi Sawai, Motomu Kurata, et al. · International Conference on Solid State Devices and Materials (SSDM) · 3
TCAD Simulation of a 3D NAND Memory Utilizing In-Ga-Zn-Oxide: "3D OS NAND" with 4 V Drive, High Endurance and Density
2020 · Hitoshi Kunitake, Hajime Kimura, et al. · ECS Meeting Abstracts · 1
Three-Dimensionally and Stackable C-Axis-Aligned Crystalline Indium-Gallium-Zinc Oxide Field-Effect Transistor with Gate Length of 6.8-nm
2022 · Hitoshi Kunitake, Kazuki Tsuda, et al. · Research Square
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Computing-in-Memory Demonstration of Multiple-State (>8) Analog Memory Cell with Ultra-Low (<1 nA/cell) Current Enabled by Monolithic CAAC-IGZO FET + Si CMOS FET Stack for Highly-Efficient AI Applications
2021 · Satoru Ohshita, Hidefumi Rikimaru, et al. · International Conference on Solid State Devices and Materials (SSDM)
Characteristics Variations and Reliability of CAAC-IGZO FETs
2019 · S. Tezuka, T. Takeuchi, et al. · International Conference on Solid State Devices and Materials (SSDM)
Works count: 16
Citation count: 183
H-index: 7
I10-index: 5
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