Get started
Author

Mayahsa M. Ali

Observed names: Mayahsa M Ali, Mayahsa Mohammed-Ali
ORCID: 0000-0001-7688-3274
Observed ORCID: 0000-0001-7688-3274
OpenAlex ID: A5039875700
Thermal response for intermodulation distortion components of GaN HEMT for low and high frequency applications
2019 · Mohammad A. Alim, Mayahsa M. Ali, et al. · Microelectronic Engineering · 17
Temperature Dependence of the Taylor Series Coefficients and Intermodulation Distortion Characteristics of GaN HEMT
2019 · Mohammad Abdul Alim, Mayahsa M. Ali, et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 17
Nonlinear distortion analysis for single heterojunction GaAs HEMT with frequency and temperature
2018 · Mohammad A Alim, Mayahsa M Ali, et al. · Semiconductor Science and Technology · 13
PDF
Thermal characterisation of AlGaN/GaN HEMT on silicon carbide substrate for high frequency application
2014 · Mohammad A Alim, Ali A Rezazadeh, et al. · European Microwave Integrated Circuits Conference · 13
Device considerations and characterizations of pre and post fabricated GaAs based pHEMTs using multilayer 3D MMIC technology
2017 · Mohammad A Alim, Mayahsa M Ali, et al. · Semiconductor Science and Technology · 12
Investigation of nonlinear distortion in double heterojunction GaAs based pHEMT subject to frequency and temperature
2018 · Mohammad A. Alim, Mayahsa M. Ali, et al. · Solid-State Electronics · 10
Measurement‐based analysis of GaAs HEMT technologies: Multilayer D‐H pseudomorphic HEMT versus conventional S‐H HEMT
2021 · Mohammad A. Alim, Mayahsa M. Ali, et al. · International Journal of Numerical Modelling Electronic Networks Devices and Fields · 9
0.25 μm AlGaN/GaN HEMT nonlinearity modelling and characterization over a wide temperature range
2015 · Mohammad A Alim, Ali A Rezazadeh, et al. · European Microwave Integrated Circuits Conference · 9
Nonlinearity measurement and analysis of 0.25 µm GaN HEMT over frequency and temperature using two-tone intermodulation distortion
2015 · Mohammad A Alim, Ali A Rezazadeh, et al. · European Microwave Conference (EuMC) · 6
RF/Linearity figures of merit estimation for GaAs and GaN/SiC-based Nano-HEMTs
2022 · Mohammad Abdul Alim, Mayahsa M. Ali, et al. · Micro and Nanostructures · 5
Experimental insight into the third‐order intercepts and nonlinear distortion of GaN HEMTs
2020 · Mohammad A. Alim, Mayahsa M. Ali, et al. · International Journal of RF and Microwave Computer-Aided Engineering · 5
PDF
Nonlinearity study of double and single channel GaAs HEMTs
2011 · Mayahsa Mohammed-Ali, Peter B. K. Kyabaggu, et al. · European Microwave Integrated Circuit Conference · 5
Measurement based study of microwave double channel pHEMT device
2023 · Mohammad A Alim, Mayahsa M. Ali · International Journal of Electronics · 3
On the correlation between intermodulation distortion and RF transconductance for microwave GaN HEMT
2019 · Mayahsa M Ali, Mohammad A Alim, et al. · Semiconductor Science and Technology · 3
Performance Projection of GaN HEMT: Bias and Temperature Dependent Study of 3rd-Order Intermodulation Distortion
2021 · Mohammad A. Alim, I. Jahan, et al. · International Conference on Sustainable Technologies for Industry 5.0 (STI) · 2
Effect of different separation frequencies of the two-tone input signal on the output power of GaN on SiC HEMT
2023 · Mohammad Abdul Alim, Mayahsa M. Ali, et al. · Micro and Nanostructures · 1
Wideband 3D coplanar waveguide to thin-film microstrip transition in multilayer technology
2011 · Peter B. K. Kyabaggu, Emerson Sinulingga, et al. · European Microwave Conference (EuMC) · 1
PDF
Nonlinearity Measurement and Analysis of 0.25 ?m
2015 · Mohammad A. Alim, A.A. Rezazadeh, et al. · European Microwave Conference (EuMC)
0.25 ?m AlGaN/GaN HEMT Nonlinearity Modelling
2015 · Mohammad A. Alim, A.A. Rezazadeh, et al. · European Microwave Integrated Circuits Conference
Works count: 19
Citation count: 131
H-index: 8
I10-index: 6
Year
Topic
Type