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Arijit Sengupta

Observed names: A. Sengupta, Sengupta, Arijit
ORCID: 0000-0002-3851-3843
Observed ORCID: 0000-0002-3851-3843
OpenAlex ID: A5039907462
LET and Voltage Dependence of Single-Event Burnout and Single-Event Leakage Current in High-Voltage SiC Power Devices
2024 · Arijit Sengupta, Dennis R. Ball, et al. · IEEE Transactions on Nuclear Science · 40
Single-Event Burnout in Vertical β -Ga₂O₃ Diodes With Pt/PtO ₓ Schottky Contacts and High- k Field-Plate Dielectrics
2024 · S. Islam, A. S. Senarath, et al. · IEEE Transactions on Nuclear Science · 39
Impact of Heavy-Ion Range on Single-Event Effects in Silicon Carbide Power Junction Barrier Schottky Diodes
2023 · Arijit Sengupta, Dennis R. Ball, et al. · IEEE Transactions on Nuclear Science · 38
Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design
2024 · A. S. Senarath, S. Islam, et al. · Applied Physics Letters · 22
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Physical Model for SiC Power Device Heavy-Ion Burnout Based on Pre-Strike Depletion Capacitance Energy Storage
2025 · Steven L. Kosier, Arijit Sengupta, et al. · IEEE Transactions on Nuclear Science · 15
Heavy Ion-Induced Single-Event Leakage Current and Burnout in Homojunction GaN p-i-n Diodes
2025 · A. S. Senarath, S. Islam, et al. · IEEE Transactions on Nuclear Science · 14
Single-Event Effects in Heavy-Ion Irradiated 3-kV SiC Charge-Balanced Power Devices
2024 · Arijit Sengupta, Dennis R. Ball, et al. · IEEE Transactions on Nuclear Science · 13
Effects of Epitaxial Layer Thickness on Heavy Ion-Induced Single-Event Burnout in Vertical β-Ga₂O₃ Schottky Barrier Diodes
2025 · S. Islam, A. S. Senarath, et al. · IEEE Transactions on Nuclear Science · 10
Single-Event Burnout by Cf-252 Irradiation in Vertical $\beta$-Ga 2 O 3 Diodes with Pt and PtO x Schottky Contacts and High Permittivity Dielectric Field Plate
2023 · Sajal Islam, Aditha S. Senarath, et al. · Conference digest · 9
Temperature Dependence of Heavy-Ion-Induced Leakage Current in SiC Power MOSFETs
2025 · K. Niskanen, C. Martinella, et al. · IEEE Transactions on Nuclear Science · 6
Effects of Incident Angle on Single-Event Leakage Current Degradation in Heavy-Ion Irradiated 1800- and 4500-V SiC Power MOSFETs
2025 · A. Sengupta, C. Martinella, et al. · IEEE Transactions on Nuclear Science · 5
Physical Models for Epitaxial Doping Dependence of SELC in SiC Power Devices
2025 · A. Sengupta, S. L. Kosier, et al. · IEEE Transactions on Nuclear Science · 4
Unifying Model for Estimating SELC/SEB in SiC Power Devices Using a Nonlinear Ion Track Resistance
2026 · Dennis R. Ball, Steven L. Kosier, et al. · IEEE Transactions on Nuclear Science · 3
Heavy Ion Induced Single Event Effects in 6.5 and 10 kV SiC Power MOSFETs and Correlation to the SELC and SEB Depletion Capacitance Energy Models
2026 · Sajal Islam, Arijit Sengupta, et al. · IEEE Transactions on Nuclear Science · 1
Ideal Specific On-Resistance Versus Single-Event Burnout and Leakage Voltage Thresholds in Vertical SiC Power Devices
2026 · Steven L. Kosier, Arijit Sengupta, et al. · IEEE Transactions on Device and Materials Reliability · 1
Comparative Study of SiC MOSFET and JFET using an Active Gate Driver
2022 · Arijit Sengupta, Mohammed Agamy · Global Power, Energy and Communication Conference · 1
Efficient single-event effects test procedure for silicon carbide power devices
2026 · Arijit Sengupta, Andrew L. Sternberg, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
Single-Event Leakage Current and Single-Event Burnout in High-Voltage GaN and SiC PiN Diodes: A Comparative Analysis
2026 · Grant Mayberry, Xianduo Zhao, et al.
Influence of Ion LET and Epitaxial Thickness on Single-Event Effects in Homojunction GaN Vertical Diodes
2026 · A. S. Senarath, S. Islam, et al. · IEEE Transactions on Nuclear Science
Active Gate Driving of Cascoded SiC JFETs
2022 · Arijit Sengupta, Sima Azizi Aghdam, et al.
Characterization of wide-bandgap SiC field effect transistors and their active gate driving circuit in high power applications
2021 · Sengupta, Arijit
Works count: 24
Citation count: 222
H-index: 9
I10-index: 8
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