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Author

B. Chouaibi

Observed name: Bassem Chouaibi
ORCID: 0000-0003-2043-3674
Observed ORCID: 0000-0003-2043-3674
OpenAlex ID: A5040503490
Observation and study of the negative magnetoresistance in porous silicon
2012 · B. Chouaibi, A. Benfredj, et al. · Solid-State Electronics · 8
Study of magnetoconductance effect in silicon nanowires formed by chemical etching in HF/AgNO 3 solution: Effect of etching time
2017 · B. Chouaibi, M. Radaoui, et al. · Journal of Crystal Growth · 5
Electrical conductance and magnetoconductance effect on n-type porous silicon: Contribution of weak localization correction
2015 · B. Chouaibi, M. Radaoui, et al. · Superlattices and Microstructures · 5
Effect of porosity on the enhancement of relative magnetoconductance in porous Si nanostructures: a comparative study with Si nanowires
2017 · B. Chouaibi, M. Radaoui, et al. · Applied Physics A · 2
Porosity dependence of positive magnetoconductance in n‐type porous silicon
2012 · Bassem Chouaibi, Moufid Radaoui, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 1
Works count: 5
Citation count: 21
H-index: 3
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