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Oskar Sadowski

High Breakdown Voltage and High Current Injection Vertical GaN-on-GaN p-n Diodes With Extremely Low On-Resistance Fabricated on Ammonothermally Grown Bulk GaN Substrates
2022 · Andrzej Taube, Maciej Kamiński, et al. · IEEE Transactions on Electron Devices · 19
Carrier Trap Density Reduction at SiO2/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres
2023 · Ernest Brzozowski, Maciej Kaminski, et al. · Materials · 14
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The influence of oxygen partial pressure on the properties of sputtered vertical NiO/β-Ga2O3 heterojunction diodes
2024 · Andrzej Taube, Michał A. Borysiewicz, et al. · Materials Science in Semiconductor Processing · 13
Low‐Resistivity Ti/Al/TiN/Au Ohmic Contacts to Ga‐ and N‐Face n‐GaN for Vertical Power Devices
2024 · Oskar Sadowski, Maciej Kamiński, et al. · physica status solidi (a) · 13
Vertical GaN Trench‐MOSFETs Fabricated on Ammonothermally Grown Bulk GaN Substrates
2024 · Maciej Kamiński, Andrzej Taube, et al. · physica status solidi (a) · 9
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Investigation of amorphous (Ir,Ru)-Si and (Ir,Ru)-Si-O Schottky contacts to (001) β -Ga 2 O 3
2022 · Andrzej Taube, Michał A. Borysiewicz, et al. · Materials Science in Semiconductor Processing · 5
Large-area metal-integrated grating electrode achieving near 100% infrared transmission
2026 · Karolina Bogdanowicz, Weronika Głowadzka, et al. · Light Science & Applications · 3
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2 kV normally-off recessed p-NiO gate GaN-based HEMTs fabricated using “buffer-free” AlGaN/GaN heterostructures on SiC substrates
2026 · Justyna Wierzbicka, Wojciech Hendzelek, et al. · Materials Science in Semiconductor Processing · 3
On the origin of off-state leakage current in n-p-n vertical structures for GaN-based trench-MOSFETs
2025 · Maciej Kamiński, Kamil Abendroth, et al. · Power Electronic Devices and Components · 3
X-ray Photoelectron Spectroscopy in the Analysis of Titanium and Palladium Nanolayers
2024 · G. Wesołowski, A. Kubala-Kukuś, et al. · Acta Physica Polonica A · 2
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Vertical GaN p–n Diodes with Ultralow Bevel Angle Mesa Termination Fabricated Using Photoresist Reflow and Single Cl 2 /BCl 3 /SF 6 Etching Step
2025 · Jarosław Tarenko, Maciej Kamiński, et al. · physica status solidi (a) · 1
Fabrication and Characterization of AlGaN/GaN‐on‐Si High Electron Mobility Transistors with p‐type NiO Based Gate Stack
2025 · Andrzej Taube, Wojciech Hendzelek, et al. · physica status solidi (a) · 1
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1200 V-class vertical GaN-on-GaN p – i – n diodes with two-zone step-etched junction termination extension
2026 · Jarosł Tarenko, Maciej Kamiński, et al. · Semiconductor Science and Technology
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Low‐Angle X‐Ray Photoelectron Spectroscopy in the Analysis of Gold Nanolayers
2025 · Grzegorz Wesołowski, Aldona Kubala‐Kukuś, et al. · X-Ray Spectrometry
Critical aspects of VCSELs fabrication
2025 · Karolina Olucha, Marek Ekielski, et al. · Vertical-Cavity Surface-Emitting Lasers
Fabrication of monolithic subwavelength high-aspect ratio GaAs gratings integrated with metal for transmission of unpolarized infrared light
2024 · Karolina Bogdanowicz, Weronika Glowadzka, et al. · Quantum Sensing and Nano Electronics and Photonics
All‐Oxide Transparent Vertical Indium Tin Oxide and Aluminum‐Doped Zinc Oxide/β‐Ga2O3 Schottky Diodes
2023 · Andrzej Taube, Michał A. Borysiewicz, et al. · physica status solidi (a)
Works count: 17
Citation count: 86
H-index: 5
I10-index: 4
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