Get started
Author

Vamsi Putcha

Observed names: Putcha, Vamsi, V Putcha, V. Putcha
Observed institutions: University of Padua, Vanderbilt University, Radboud University Medical Center, IMEC, KIOXIA Corporation (Japan), Sungkyunkwan University, KU Leuven
ORCID: 0000-0003-1907-5486
Observed ORCID: 0000-0003-1907-5486
OpenAlex ID: A5040851808
CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance
2019 · U. Peralagu, A. Alian, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 81
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability
2018 · B. Kaczer, J. Franco, et al. · Microelectronics Reliability · 71
Stacked nanosheet fork architecture for SRAM design and device co-optimization toward 3nm
2017 · P. Weckx, J. Ryckaert, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 52
Statistical poly-Si grain boundary model with discrete charging defects and its 2D and 3D implementation for vertical 3D NAND channels
2015 · R. Degraeve, S. Clima, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 49
Origins and implications of increased channel hot carrier variability in nFinFETs
2015 · B. Kaczer, J. Franco, et al. · IEEE International Reliability Physics Symposium proceedings · 42
PDF
Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation
2020 · K. Takakura, V. Putcha, et al. · IEEE Transactions on Electron Devices · 36
Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO2/Al2O3 Dielectrics
2019 · Stefano Bonaldo, Vamsi Putcha, et al. · IEEE Transactions on Nuclear Science · 36
Defect profiling in FEFET Si:HfO2 layers
2020 · B. J. O'Sullivan, V. Putcha, et al. · Applied Physics Letters · 35
PDF
GaN-on-Si mm-wave RF Devices Integrated in a 200mm CMOS Compatible 3-Level Cu BEOL
2020 · B. Parvais, A. Alian, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 28
The defect-centric perspective of device and circuit reliability—From gate oxide defects to circuits
2016 · B. Kaczer, J. Franco, et al. · Solid-State Electronics · 24
Advanced MOSFET variability and reliability characterization array
2015 · M. Simicic, V. Putcha, et al. · IEEE International Integrated Reliability Workshop final report · 22
PDF
Experimental and theoretical verification of channel conductivity degradation due to grain boundaries and defects in 3D NAND
2017 · A. Subirats, A. Arreghini, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 21
Total-Ionizing-Dose Effects on InGaAs FinFETs With Modified Gate-stack
2019 · Simeng E. Zhao, Stefano Bonaldo, et al. · IEEE Transactions on Nuclear Science · 20
Gate stack thermal stability and PBTI reliability challenges for 3D sequential integration: Demonstration of a suitable gate stack for top and bottom tier nMOS
2017 · J. Franco, L. Witters, et al. · IEEE International Reliability Physics Symposium proceedings · 18
Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole
2016 · J. Franco, A. Vais, et al. · Symposium on VLSI Technology · 18
On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices
2021 · V. Putcha, L. Cheng, et al. · IEEE International Reliability Physics Symposium proceedings · 16
Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs (invited)
2017 · J. Franco, V. Putcha, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 16
On the distribution of oxide defect levels in Al2O3 and HfO2 high-k dielectrics deposited on InGaAs metal-oxide-semiconductor devices studied by capacitance-voltage hysteresis
2017 · Abhitosh Vais, Jacopo Franco, et al. · Journal of Applied Physics · 16
A New Quality Metric for III–V/High-k MOS Gate Stacks Based on the Frequency Dispersion of Accumulation Capacitance and the CET
2017 · Abhitosh Vais, Jacopo Franco, et al. · IEEE Electron Device Letters · 15
Record performance Top-down In0.53Ga0.47As vertical nanowire FETs and vertical nanosheets
2017 · S. Ramesh, Ts. Ivanov, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 14
On the Apparent Non-Arrhenius Temperature Dependence of Charge Trapping in IIIV/High- ${k}$ MOS Stack
2018 · Vamsi Putcha, Jacopo Franco, et al. · IEEE Transactions on Electron Devices · 13
PDF
Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer
2022 · Alireza Alian, Raul Rodriguez, et al. · European Solid-State Device Research Conference · 12
Leakage mechanism in ion implantation isolated AlGaN/GaN heterostructures
2022 · Hao Yu, Vamsi Putcha, et al. · Journal of Applied Physics · 12
BTI reliability and time-dependent variability of stacked gate-all-around Si nanowire transistors
2017 · Adrian Chasin, Jacopo Franco, et al. · IEEE International Reliability Physics Symposium proceedings · 12
From 5G to 6G: will compound semiconductors make the difference?
2020 · N. Collaert, A. Alian, et al. · IEEE International Conference on Solid-State and Integrated Circuit Technology · 11
Works count: 60
Citation count: 852
H-index: 16
I10-index: 27
Year
Topic
Type