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Khairil Ezwan Kaharudin

Observed names: K E Kaharudin, K K. E. Kaharudin, K. E. Kaharudin, K.E. Kaharudin, Kaharudin Khairil Ezwan, Kaharudin, K.E, Kaharudin, K.E., Khairil E. Kaharudin
ORCID: 0000-0002-9689-7654
Observed ORCID: 0000-0002-9689-7654
OpenAlex ID: A5040987501
Efficient hole extraction by doped-polyaniline/graphene oxide in lead-free perovskite solar cell: a computational study
2025 · Nabilah Ahmad Jalaludin, Fauziyah Salehuddin, et al. · Physica Scripta · 11
Enhanced performance of 19 single gate MOSFET with high permittivity dielectric material
2020 · Ameer F. Roslan, F. Salehuddin, et al. · Indonesian Journal of Electrical Engineering and Computer Science · 8
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Analysis of analog and RF behaviors in junctionless double gate vertical MOSFET
2020 · K. E. Kaharudin, Z. A. F. M. Napiah, et al. · Bulletin of Electrical Engineering and Informatics · 7
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Performance analysis of ultrathin junctionless double gate vertical MOSFETs
2019 · K. E. Kaharudin, Z. A. F. M. Napiah, et al. · Bulletin of Electrical Engineering and Informatics · 6
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Geometric and process design of ultra-thin junctionless double gate vertical MOSFETs
2019 · K. E. Kaharudin, F. Salehuddin, et al. · International Journal of Electrical and Computer Engineering (IJECE) · 6
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Optimization of 10nm Bi-GFET Device for higher ION/IOFF ratio using Taguchi Method
2018 · Ameer F Roslan, K E Kaharudin, et al. · Journal of Physics Conference Series · 6
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Implementation of Taguchi Modeling for Higher Drive Current (ION) in Vertical DG-MOSFET Device
2014 · Kaharudin, K.E., Hamidon, A.H, et al. · Journal of Telecommunication Electronic and Computer Engineering (JTEC) · 6
Effect of PANI-Doped-Graphene Oxide as HTL in Perovskite Solar Cells Using SCAPS-1D Software
2024 · Nabilah Ahmad Jalaludin, Fauziyah Salehuddin, et al. · Journal of Advanced Research in Micro and Nano Engieering · 5
Optimization of Electrical Properties in TiO2/WSix-based Vertical DG-MOSFET using Taguchi-based GRA with ANN
2018 · K.E. Kaharudin, F. Salehuddin, et al. · Journal of Telecommunication Electronic and Computer Engineering (JTEC) · 5
Multi-response optimization in vertical double gate PMOS device using Taguchi method and grey relational analysis
2016 · K.E. Kaharudin, F. Salehuddin, et al. · IEEE International Conference on Semiconductor Electronics · 5
Optimization of process parameter variations on leakage current in in silicon-oninsulator vertical double gate mosfet device
2015 · K.E. Kaharudin, F. Salehuddin, et al. · JOURNAL OF MECHANICAL ENGINEERING AND SCIENCES · 5
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Optimization of perovskite solar cell with MoS2-based HTM layer using hybrid L27 Taguchi-GRA based genetic algorithm
2024 · Khairil Ezwan Kaharudin, Fauziyah Salehuddin, et al. · Bulletin of Electrical Engineering and Informatics · 4
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Optimal modeling of perovskite solar cell with graphene oxide as hole transport layer using L32 (28) Taguchi design
2024 · Khairil E. Kaharudin, Nabilah A. Jalaludin, et al. · International Journal of Nanoelectronics and Materials (IJNeaM) · 4
Predictive Modeling of Mixed Halide Perovskite Cell Using Hybrid L27 OA Taguchi-based Ga-mlr-ga Approach
2021 · Khairil Ezwan Kaharudin, Fauziyah Salehuddin · Jurnal Teknologi · 4
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3D Double Gate FinFET Construction of 30 nm Technology Node Impact Towards Short Channel Effect
2018 · Ameer F. Roslan, F. Salehuddin, et al. · Indonesian Journal of Electrical Engineering and Computer Science · 4
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Application of Taguchi-based Grey Fuzzy Logic for Simultaneous Optimization in TiO2/WSix-based Vertical Double-gate MOSFET
2017 · K.E. Kaharudin, F. Salehuddin, et al. · Journal of Telecommunication Electronic and Computer Engineering (JTEC) · 4
Impact of Different Dose, Energy and Tilt Angle in Source/Drain Implantation for Vertical Double Gate PMOS Device
2016 · K.E. Kaharudin, F. Salehuddin, et al. · Journal of Telecommunication Electronic and Computer Engineering (JTEC) · 4
Comparative high-k material gate spacer impact in DG-FinFET parameter variations between two structures
2019 · Ameer F. Roslan, F. Salehuddin, et al. · Indonesian Journal of Electrical Engineering and Computer Science · 3
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Study of Electrical Characteristic for 50nm and 10nm Soi Body Thickness in Mosfet Device
2015 · M.N.I.A Aziz, F. Salehuddin, et al. · Jurnal Teknologi · 3
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Taguchi Modeling of Process Parameters in Vdg-mosfet Device for Higher Ion/ioff Ratio
2015 · Khairil Ezwan Kaharudin, Fauziyah Salehuddin, et al. · Jurnal Teknologi · 3
Analysis of process parameter effect on DIBL in n-channel MOSFET device using L27 orthogonal array
2014 · F. Salehuddin, K. E. Kaharudin, et al. · AIP conference proceedings · 3
Virtual Fabrication of 14nm Gate Length n-Type Double Gate MOSFET
2024 · N. H. N. M. Nizam, Afifah Maheran A. H, et al. · International Journal of Nanoelectronics and Materials (IJNeaM) · 2
Unveiling the photovoltaic properties of ETL-free, lead-free, and graphene-based PSC
2024 · Nabilah A. Jalaludin, F. Salehuddin, et al. · IEEE International Conference on Semiconductor Electronics · 2
Analysis of Inverted Planar Perovskite Solar Cells with Graphene Oxide as HTL using L9 OA Taguchi Method
2024 · Nur Aliesa Johari, Nabilah Ahmad Jalaludin, et al. · Journal of Advanced Research in Micro and Nano Engieering · 2
Optimization of 16 nm DG-FinFET using L25 orthogonal array of taguchi statistical method
2020 · Ameer F. Roslan, F. Salehuddin, et al. · Indonesian Journal of Electrical Engineering and Computer Science · 2
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Works count: 52
Citation count: 129
H-index: 6
I10-index: 1
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