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Author

Linhua Huang

Observed name: Huang, Linhua
ORCID: 0000-0002-6536-8346
Observed ORCID: 0000-0002-6536-8346
OpenAlex ID: A5041217536
Simulation Study of a Novel Snapback-Free and Low Turn-Off Loss Reverse-Conducting IGBT With Controllable Trench Gate
2017 · Jie Wei, Xiaorong Luo, et al. · IEEE Electron Device Letters · 36
Characterization and Performance Evaluation of the Superjunction RB-IGBT in Matrix Converter
2017 · Kun Zhou, Linhua Huang, et al. · IEEE Transactions on Power Electronics · 36
A Snapback-Free Fast-Switching SOI LIGBT With Polysilicon Regulative Resistance and Trench Cathode
2017 · Linhua Huang, Xiaorong Luo, et al. · IEEE Transactions on Electron Devices · 26
An Ultralow Loss Superjunction Reverse Blocking Insulated-Gate Bipolar Transistor With Shorted-Collector Trench
2016 · Kun Zhou, Xiaorong Luo, et al. · IEEE Electron Device Letters · 26
A Snapback-Free Fast-Switching SOI LIGBT With an Embedded Self-Biased n-MOS
2018 · Xiao Rong Luo, Zheyan Zhao, et al. · IEEE Transactions on Electron Devices · 23
A Carrier Stored SOI LIGBT With Ultralow ON-State Voltage and High Current Capability
2018 · Tao Sun, Xiaorong Luo, et al. · IEEE Transactions on Electron Devices · 20
A Snapback-Free Reverse Conducting Insulated-Gate Bipolar Transistor With Discontinuous Field-Stop Layer
2018 · Gaoqiang Deng, Xiao Rong Luo, et al. · IEEE Transactions on Electron Devices · 19
Characterization of Al2O3/LaAlO3/SiO2 Gate Stack on 4H-SiC After Post-Deposition Annealing
2021 · Linhua Huang, Yong Liu, et al. · IEEE Transactions on Electron Devices · 18
Design and Characterization of the Deep-Trench, U-Shaped Field-Plate Edge Termination for 1200-V-Class SiC Devices
2019 · Yong Liu, Wentao Yang, et al. · IEEE Transactions on Electron Devices · 17
Static Performance and Threshold Voltage Stability Improvement of Al2O3/LaAlO3/SiO2Gate-Stack for SiC Power MOSFETs
2022 · Linhua Huang, Yong Liu, et al. · IEEE Transactions on Electron Devices · 14
A Fast and Soft Reverse Recovery Diode With a Punch-Through NPN Structure
2022 · Xin Peng, Yong Liu, et al. · IEEE Electron Device Letters · 9
A High Bidirectional Blocking Capability Insulated-Gate Bipolar Transistor With Ultralow Loss
2018 · Xiaorong Luo, Qing Liu, et al. · IEEE Transactions on Electron Devices · 9
On-Resistance–Reliability Tradeoffs in Al₂O₃/LaAlO₃/SiO₂ Gate for SiC Power MOSFETs
2022 · Linhua Huang, Yong Liu, et al. · IEEE Transactions on Electron Devices · 7
A New Double Trench, Buried-P JTE Edge Termination for 1200 V-class SiC Devices
2020 · Yong Liu, Hao Feng, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 5
Experimental Demonstration of the Double-Trench, Buried-P JTE Edge Termination with Short Edge Width and High dV/dt Capability for 1200 V-class SiC Devices
2024 · Yong Liu, Hao Feng, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 4
Analysis and Characterization of the Punchthrough n-p-n Diode for Hard Switching Power Control Applications
2023 · Xin Peng, Yong Liu, et al. · IEEE Transactions on Electron Devices · 3
On the Electron Extraction Mechanism in Punch-through NPN Fast Recovery Diodes
2023 · Xin Peng, Yong Liu, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs
A Novel LaAlO3 Gate Dielectric for High-Performance SiC Power MOSFETs
2023 · Linhua Huang
Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs
2023 · Naoto, Fujishima, Onozawa, Yuichi, et al. · Rare & Special e-Zone (The Hong Kong University of Science and Technology)
Works count: 20
Citation count: 272
H-index: 10
I10-index: 10
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