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Kazuhide Ino

Observed names: K. Ino, Kazuhide INO
Institution: ROHM
OpenAlex ID: A5041324880
Ion energy, ion flux, and ion species effects on crystallographic and electrical properties of sputter-deposited Ta thin films
1997 · Kazuhide Ino, Toshikuni Shinohara, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 84
Tantalum-gate thin-film SOI nMOS and pMOS for low-power applications
1997 · H. Shimada, Y. Hirano, et al. · IEEE Transactions on Electron Devices · 37
SiC Power Device Evolution Opening a New Era in Power Electronics
2019 · Kazuhide Ino, Mineo Miura, et al. · IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) · 23
Automotive Traction Inverter Utilizing SiC Power Module
2018 · Masaharu Nakanishi, Kenji Hayashi, et al. · 16
Plasma enhanced in situ chamber cleaning evaluated by extracted-plasma-parameter analysis
1996 · K. Ino, I. Natori, et al. · IEEE Transactions on Semiconductor Manufacturing · 16
Gate oxide reliability concerns in gate-metal sputtering deposition process: an effect of low-energy large-mass ion bombardment
1999 · Takeo Ushiki, Mo-Chiun Yu, et al. · Microelectronics Reliability · 14
Improvement of gate oxide reliability for tantalum-gate MOS devices using xenon plasma sputtering technology
1998 · T. Ushiki, K. Kawai, et al. · IEEE Transactions on Electron Devices · 10
1200V 4H-SiC Trench Devices
2014 · Ryota Nakamura, Yuki Nakano, et al. · PCIM Europe: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM Europe) · 9
Highly-reliable, low-resistivity bcc-Ta gate MOS technology using low-damage Xe-plasma sputtering and Si-encapsulated silicidation process
2002 · K. Ino, T. Ushiki, et al. · Symposium on VLSI Technology · 9
Reduction of plasma-induced gate oxide damage using low-energy large-mass ion bombardment in gate-metal sputtering deposition
1998 · T. Ushiki, M.-C. Yu, et al. · IEEE International Reliability Physics Symposium proceedings · 9
In Situ Chamber Cleaning Using Halogenated–Gas Plasmas Evaluated by Plasma-Parameter Extraction
1994 · Kazuhide Ino, Iwao Natori, et al. · Japanese Journal of Applied Physics · 6
Formation of Ultra-Shallow and Low-Reverse-Bias-Current Tantalum-Silicided Junctions Using a Si-Encapsulated Silicidation Technique and Low-Temperature Furnace Annealing below 550°C
1998 · Kazuhide Ino, Yoshiyuki Taniguchi, et al. · Japanese Journal of Applied Physics · 4
Improvement of turbomolecular pumps for ultraclean, low-pressure, and high-gas-flow processing
1998 · Kazuhide Ino, Katsuyuki Sekine, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 4
Evolution of SiC products for industrial application
2016 · Naoyuki Kizu, Satoru Nate, et al. · 3
New era of power electronics by SiC power devices evolution
2014 · Kazuhide Ino · International Conference on Planarization/CMP Technology (ICPT) · 3
High Efficient Super Junction MOSFET Intelligent Power Module
2015 · Yuji Ishimatsu, Motohiro Ando, et al. · PCIM Europe: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM Europe) · 1
Modeling and Analysis of RF Plasma Using Electrical Equivalent Circuit
1995 · Kazuhide INO, Tadahiro OHMI · International Conference on Solid State Devices and Materials (SSDM) · 1
Through-UHV-Pump Impurity Back Diffusion Under Large Gas Flow and Its Minimization
2005 · T. Shihata, K. Ino, et al. · IEEE International Symposium on Semiconductor Manufacturing conference proceedings
Oxygen-contamination-free ultra-low-resistance silicided contact technology for high performance power devices
2002 · K. Ino, K. Yamada, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs
Analysis of RF plasma using electrical equivalent circuit
2002 · M. Hirayama, K. Ino, et al. · IEEE International Symposium on Semiconductor Manufacturing conference proceedings
Balanced electron drift oxide etcher with Xe added gas chemistry for low cost and high performance contact metallization
1999 · H. Komeda, M. Hirayama, et al. · Symposium on VLSI Technology
Enhancement of Silicon Epitaxy by Increased Phosphorus Concentration in a Low-Energy Ion Bombardment Process
1998 · Hajime Kumami, Wataru Shindo, et al. · Japanese Journal of Applied Physics
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Enhancement of Silicon Epitaxy by Increased Phosphorus Concentration in a Low Energy Ion Bombardment Process
1997 · H. Kumami, W. Shindo, et al. · International Conference on Solid State Devices and Materials (SSDM)
Formation of Ultra-Shallow, Low-Leakage and Low-Contact-Resistance Junctions by Low-Temperature Si-Encapsulated Silicidation Process
1997 · Kazuhide Ino, Yoshiyuki Taniguchi, et al. · International Conference on Solid State Devices and Materials (SSDM)
Formation of Low-Leakage-Current and Low-Contact-resistance Tantalum Silicided Junctions by Low-Temperature Process
1997 · Yoshiyuki Taniguchi, Kazuhide Ino, et al. · Technical report of IEICE. SDM
Works count: 27
Citation count: 249
H-index: 9
I10-index: 7
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