Author

Je-Hyuk Kim

Institutions: Kookmin University, LG (South Korea)

Observed institutions: Kookmin University, LG (South Korea)

ORCID: 0000-0002-0665-8263

Observed ORCID: 0000-0002-0665-8263

OpenAlex ID: A5041357913

Analysis of Drain-Induced Barrier Lowering in InGaZnO Thin-Film Transistors

2022 · Tae Jun Yang, Je-Hyuk Kim, et al. · IEEE Transactions on Electron Devices · 30

Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

2021 · Je-Hyuk Kim, Jun Tae Jang, et al. · Micromachines · 24

Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression

2022 · Donguk Kim, Je-Hyuk Kim, et al. · Scientific Reports · 20

Reliability-Aware SPICE Compatible Compact Modeling of IGZO Inverters on a Flexible Substrate

2021 · Je-Hyuk Kim, Youngjin Seo, et al. · Applied Sciences · 13

Works count: 4

Citation count: 87

H-index: 4

I10-index: 4